Answer:
increase in temperature of the intrinsic semiconductor
Explanation:
- If the p-side has a higher doping concentration, it implies that number of holes (positive ion) increased which is greater than number of electron (negative ion) in the n-side
- in order to balance the intrinsic concentration, that is to balance the number of holes and electrons which depends on temperature.
- an increase in the temperature of the intrinsic semiconductor (p-side), increases the number of electron but number of holes remains constant.
A balance in the intrinsic concentration helps in tuning to the same radio channel.
Answer:
V₂ = 12.43 L
Explanation:
Given data:
Initial pressure = 650 KPa
Initial volume = 2.2 L
Final pressure = 115 KPa
Final volume = ?
Solution:
The given problem will be solved through the Boyles law,
"The volume of given amount of gas is inversely proportional to its pressure by keeping the temperature and number of moles constant"
Mathematical expression:
P₁V₁ = P₂V₂
P₁ = Initial pressure
V₁ = initial volume
P₂ = final pressure
V₂ = final volume
Now we will put the values in formula,
P₁V₁ = P₂V₂
650 KPa ×2.2 L = 115 KPa × V₂
V₂ = 1430 KPa. L/ 115 KPa
V₂ = 12.43 L
The hydrogen bonding in H₂O is stronger than that of HF
Explanation:
Hydrogen bonds are special dipole-dipole attraction in which electrostatic attraction is established between hydrogen atom of one molecule and the electronegative atom of a neighboring molecule.
- The strength of hydrogen bonds depends on the how electronegative an atom is.
- Electronegativity refers to the tendency of an atom to gain electrons.
- The higher the value, the higher the tendency.
- This why oxygen with a higher electronegativity will form a stronger hydrogen bond with hydrogen compared to fluorine.
Learn more:
hydrogen bond brainly.com/question/12408823
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nabr + cacl2 are the products
