Your allowed to switch lanes as long as the road is clear and you use signals.
Answer:
Step 1 of 3
Case A:
AISI 1018 CD steel,
Fillet radius at wall=0.1 in,
Diameter of bar
From table deterministic ASTM minimum tensile and yield strengths for some hot rolled and cold drawn steels for 1018 CD steel
Tensile strength
Yield strength
The cross section at A experiences maximum bending moment at wall and constant torsion throughout the length. Due to reasonably high length to diameter ratio transverse shear will be very small compared to bending and torsion.
At the critical stress elements on the top and bottom surfaces transverse shear is zero
Explanation:
See the next steps in the attached image
Answer:
The drying time is calculated as shown
Explanation:
Data:
Let the moisture content be = 0.6
the free moisture content be = 0.08
total moisture of the clay = 0.64
total drying time for the period = 8 hrs
then if the final dry and wet masses are calculated, it follows that
t = (X0+ Xc)/Rc) + (Xc/Rc)* ln (Xc/X)
= 31.3 min.
Answer:if power factor =1 is possible for that.
Explanation:when pf is unity. means 1.
Answer:
A. N type impurities
B. P type impurities
Explanation:
A. The impurities contribute free electrons and changing the conducting property of the semi conductor. When a pentavalent impurities in a semi conductor( impurities with five valence electron) , the impurity atom replace some of the semi conductor atoms in the crystal structure where 4 of the valence electron would be involved in bonding of 4 neighbouring semiconductor while leaving the fifth electron to be free(negative charge carrier) which is available for detachment.
B. When a trivalence impurity is added to semiconductor, instead of excess electron, there will be excess hole created by crystals. Reason for this attribute is the trivalence atom will replace some tetra valence semiconductor atom, when three valence electrons of the 3 valence electrons of the trivalent impurity atom make bond with three neighbouring semiconductor which gives rise to lack of electron in the bond of the fourth neighbouring semiconductor which contribute a whole to the crystalline since trivalent impurity contribute excess holes to the crystal of semi conductor, this holes can accept electrons.
