How will the delay and active power per device change as you increase the doping density of both the N- and the P-MOSFET?
1 answer:
Answer:
hello your question is incomplete attached below is the missing part of the question
Consider an inverter operating a power supply voltage VDD. Assume that matched condition for this inverter. Make the necessary assumptions to get to an answer for the following questions.
answer : Nd ∝ rt
Explanation:
Determine how the delay and active power per device will change as the doping density of N- and P-MOSFET increases
Pactive ( active power ) = Efs * F
Pactive =
also note that ; Pactive ∝ Nd2 (
tD = K . since K = constant
Hence : Nd ∝ rt
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