Using what you know about the NAND gate, draw how you could implement a three-input NAND gate using NMOS and PMOS transistors. T
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Answer:
The solution to this question is 5.153×10⁻⁴(kmol)/(m²·s)
That is the rate of diffusion of ammonia through the layer is
5.153×10⁻⁴(kmol)/(m²·s)
Explanation:
The diffusion through a stagnant layer is given by
Where
= Diffusion coefficient or diffusivity
z = Thickness in layer of transfer
R = universal gas constant
= Pressure at first boundary
= Pressure at the destination boundary
T = System temperature
= System pressure
Where = 101.3 kPa
,
,
0.5×101.3 = 50.65 kPa
Δz = z₂ - z₁ = 1 mm = 1 × 10⁻³ m
R = T = 298 K and
= 1.18
= 1.8×10⁻⁵
= 5.153×10⁻⁴
Hence the rate of diffusion of ammonia through the layer is
5.153×10⁻⁴(kmol)/(m²·s)