Answer:
0.0659 A
Explanation:
Given that :
( saturation current )
at 25°c = 300 k ( room temperature )
n = 2 for silicon diode
Determine the saturation current at 100 degrees = 373 k
Diode equation at room temperature = I = Io 
next we have to determine the value of V at 373 k
q / kT = (1.6 * 10^-19) / (1.38 * 10^-23 * 373) = 31.08 V^-1
Given that I is constant
Io = 
= 0.0659 A
Answer:
The angle of twist can be computed using the material’s shear modulus if and only if the shear stress is still in the elastic region
Explanation:
The shear modulus (G) is the ratio of shear stress to shear strain. Like the modulus of elasticity, the shear modulus is governed by Hooke’s Law: the relationship between shear stress and shear strain is proportional up to the proportional limit of the material. The angle of twist can be computed using the material’s shear modulus if and only if the shear stress is still in the elastic region.
In poor weather, you should <u>double</u> your following distance.
Answer:
Average heat transfer =42.448w/m^2k
Nud = 13.45978
Explanation:
See attachment for step by step guide
Answer:
Z = 29.938Ω ∠22.04°
I = 2.494A
Explanation:
Impedance Z is defined as the total opposition to the flow of current in an AC circuit. In an R-L-C AC circuit, Impedance is expressed as shown:
Z² = R²+(Xl-Xc)²
Z = √R²+(Xl-Xc)²
R is the resistance = 4Ω
Xl is the inductive reactance = ωL
Xc is the capacitive reactance =
1/ωc
Given C = 12 μF, L = 6 mH and ω = 2000 rad/sec
Xl = 2000×6×10^-3
Xl = 12Ω
Xc = 1/2000×12×10^-6
Xc = 1/24000×10^-6
Xc = 1/0.024
Xc = 41.67Ω
Z = √4²+(12-41.67)²
Z = √16+880.31
Z = √896.31
Z = 29.938Ω (to 3dp)
θ = tan^-1(Xl-Xc)/R
θ = tan^-1(12-41.67)/12
θ = tan^-1(-29.67)/12
θ = tan^-1 -2.47
θ = -67.96°
θ = 90-67.96
θ = 22.04° (to 2dp)
To determine the current, we will use the relationship
V = IZ
I =V/Z
Given V = 12V
I = 29.93/12
I = 2.494A (3dp)
