Question

Consider a homogeneous gallium arsenide semiconductor at T 300 K with Nd 1016 cm3 and Na 0. (a) Calculate the thermal-equilibrium values of electron and hole concentrations. (b) For an applied E-fi eld of 10 V/cm, calculate the drift current density. (c) Repeat parts (a) and (b) if Nd 0 and Na 1016 cm3 .

Answer 1

Answer:

a) The electron carrier concentration is $10^{16}cm^{-3}$

   The hole carrier concentration is $3.24 * 10^{-4}cm^{-3}$

b) The drift current density is given as $136 Acm^{-2}$

c) Repeated part a the electron carrier concentration is $3.24 * 10^{-4}cm^{-3}$

  Repeated part a the holes carrier concentration is $10^{16}cm^{-3}$

  Repeated part b the electron density is $6.4Acm^{-2}$

Explanation:

The explanation is shown on the first , second ,third and fourth image