Answer:
The theoretical density for Niobium is 
.
Explanation:
Formula used :
where,
= density of the unit cell
Z = number of atom in unit cell
M = atomic mass
= Avogadro's number
a = edge length of unit cell
We have :
Z = 2 (BCC)
M = 92.91 g/mol ( Niobium)
Atomic radius for niobium = r = 0.143 nm
Edge length of the unit cell = a
r = 0.866 a (BCC unit cell)
On substituting all the given values , we will get the value of 'a'.
The theoretical density for Niobium is .
Answer:
The flow of a real fluid has <u>more</u> complexity as compared to an ideal fluid owing to the phenomena caused by existence of <u>viscosity</u>
Explanation:
For a ideal fluid we know that there is no viscosity of the fluid hence the boundary condition need's not to be satisfied and the flow occur's without any head loss due to viscous nature of the fluid. The friction of the pipe has no effect on the flow of an ideal fluid. But for a real fluid the viscosity of the fluid has a non zero value, the viscosity causes boundary layer effects, causes head loss and also frictional losses due to pipe friction hugely make the analysis of the flow complex. The losses in the energy of the flow becomes complex to calculate as frictional losses depend on the roughness of the pipe and Reynolds number of the flow thus increasing the complexity of the analysis of flow.
Answer:
I have solved the problem below. I hope it will let you clear the concept.
For any inquiries ask me in the comments.
Explanation:
Answer:
Explanation:
The formulae to find the voltage of a circuit varies from one component to another
For resistor,
Let apply ohms law
V∝i
Then, V=iR
Where, V is voltage supply
i=is current in the circuit
R is the resistance of the resistor
This is formula for calculating voltage in a Resistor circuit
2. Capacitor
The formula for calculating voltage in a capacitor is
q=CV
Then, V=q/C
Where V is voltage
q is charge on capacitor
And C is capacitance of capacitor
For inductor
The voltage across an inductor is
V=Li
Where V is voltage
And L is inductance and i= is the current.
Answer:
0.5m^2/Vs and 0.14m^2/Vs
Explanation:
To calculate the mobility of electron and mobility of hole for gallium antimonide we have,
(S)
Where
e= charge of electron
n= number of electrons
p= number of holes
mobility of electron
mobility of holes
electrical conductivity
Making the substitution in (S)
Mobility of electron
Mobility of hole in (S)
Then, solving the equation:
(1)
(2)
We have,
Mobility of electron 
Mobility of hole is 
