Question

The following electrical characteristics have been determined for both intrinsic and p-type extrinsic gallium antimonide (GaSb) at room temperature: σ (????∙m) –1 n (m–3 ) p (m–3 ) Intrinsic 8.9 × 10^4 8.7 × 10^23 8.7 × 10^23Extrinsic 2.3 × 10^5 7.6 × 10^22 1.0 × 10^25 (p-type)Calculate electron and hole mobilities.

Answer 1

Answer:

0.5m^2/Vs and 0.14m^2/Vs

Explanation:

To calculate the mobility of electron and mobility of hole for gallium antimonide we have,

$\sigma = n|e|\mu_e+p|e|\mu_h$ (S)

Where

e= charge of electron

n= number of electrons

p= number of holes

$\mu_e=$ mobility of electron

$\mu_h=$mobility of holes

$\sigma =$ electrical conductivity

Making the substitution in (S)

Mobility of electron

$8.9*10^4=(8.7*10^{23}*(-1.602*10^{-19})*\mu_e)+(8.7*10^{23}*(-1.602*10^{-19})*\mu_h)$

$0.639=\mu_e+\mu_h$

Mobility of hole in (S)

$2.3*10^5 = (7.6*10^{22}*(-1.602*10^{-19})*\mu_e)+(1*10^{25}*(-1.602*10^{-19}*\mu_h))$

$0.1436 = 7.6*10^{-3}\mu_e+\mu_h$

Then, solving the equation:

$0.639=\mu_e+\mu_h$ (1)

$0.1436 = 7.6*10^{-3}\mu_e+\mu_h$ (2)

We have,

Mobility of electron $\mu_e = 0.5m^2/V.s$

Mobility of hole is $\mu_h = 0.14m^2/V.s$