42. Silicon is the main ingredient of both glass and semiconductor devices, yet the physical properties of glass are different f
1 answer:
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Answer:3.77 T/s
Explanation:
Given
Area of cross-section
N=no of turns=61
Resistance=
current (i)=0.04 A
emf induced
emf induced
Answer:
a)ΔV = 6.48 KV
b)ΔU =18.79 mJ
Explanation:
Given that
E= 1.8 KV/m
a)
We know that
Electric potential difference ΔV given as
ΔV = E .d
Here
E= 1.8 KV/m
d= 3.6 m
ΔV = E .d
ΔV = 1.8 x 3.6 KV
ΔV = 6.48 KV
b)
Given that
q=+2.90 µC
Change in electric potential energy ΔU given as
ΔU = q .ΔV
ΔU =18.79 mJ
Answer:
145 m
Explanation:
Given:
Wavelength (λ) = 2.9 m
we know,
c = f × λ
where,
c = speed of light ; 3.0 x 10⁸ m/s
f = frequency
thus,
substituting the values in the equation we get,
f = 1.03 x 10⁸Hz
Now,
The time period (T) =
or
T = = 9.6 x 10⁻⁹ seconds
thus,
the time interval of one pulse = 100T = 9.6 x 10⁻⁷ s
Time between pulses = (100T×10) = 9.6 x 10⁻⁶ s
Now,
For radar to detect the object the pulse must hit the object and come back to the detector.
Hence, the shortest distance will be half the distance travelled by the pulse back and forth.
Distance = speed × time = 3 x 10^8 m/s × 9.6 x 10⁻⁷ s) = 290 m {Back and forth}
Thus, the minimum distance to target = = 145 m