Answer:
Given data
electronic system dissipating = 90 W
diameter = 15 cm
The components in the duct are cooled by forced air which enters at 32°C at a rate of 0.65 m3 /min
the duct and the remaining = 15 %
See pictures for solution.
Explanation:
See attached pictures for detailed explanation.
Answer:
answer for the question :
The ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than 0.15 for uniform etching. Suppose a 200 mm diameter silicon wafer is etched at a rate of 50.0 nm/min in a CF4 plasma.(a) How many Si atoms are removed per minute?(b) What evolution rate of SiF4 does this correspond to in standard cubic centimeters per minute?(c) What minimum flow rate of CF4 should be maintained? "
is explained in the attachment.
Explanation:
