Answer:
a) 0.489
b) 54.42 kg/s
c) 247.36 kW/s
Explanation:
Note that all the initial enthalpy and entropy values were gotten from the tables.
See the attachment for calculations
Answer:
Explanation:
From the question we are told that:
Temperature of silicon 
Electron concentration 
Electron diffusion coefficient is 
Electron mobility is 
Electron current density 
Generally the equation for the semiconductor is mathematically given by
Therefore
Harmonic excitation refers to a sinusoidal external force of a certain frequency applied to a system. ... Resonance occurs when the external excitation has the same frequency as the natural frequency of the system. It leads to large displacements and can cause a system to exceed its elastic range and fail structurally.
Answer:
<em>The temperature will be greater than 25°C</em>
Explanation:
In an adiabatic process, heat is not transferred to or from the boundary of the system. The gain or loss of internal heat energy is solely from the work done on the system, or work done by the system. The work done on the system by the environment adds heat to the system, and work done by the system on its environment takes away heat from the system.
mathematically
Change in the internal energy of a system ΔU = ΔQ + ΔW
in an adiabatic process, ΔQ = 0
therefore
ΔU = ΔW
where ΔQ is the change in heat into the system
ΔW is the work done by or done on the system
when work is done on the system, it is conventionally negative, and vice versa.
also W = pΔv
where p is the pressure, and
Δv = change in volume of the system.
In this case,<em> work is done on the gas by compressing it from an initial volume to the new volume of the cylinder. The result is that the temperature of the gas will rise above the initial temperature of 25°C </em>
