The microscopic interface asymmetry of grown semiconductor heterostructures.
The dispersion of restricted electrons. beginning from a multiband envelope formulation we practice matrix perturbation theory to derive specific expressions. Interface asymmetry, which in the conduction band Hamiltonian appear as a warping and a spin-splitting term. The warping term consequences in an inequivalence of the dispersion.
The microscopic interface asymmetry of grown semiconductor heterostructures that gives upward thrust to heavy-light hole coupling even at 0 in-plane wave vector, modifies also the dispersion of restricted electrons. beginning from a multiband envelope method we practice matrix perturbation principle to derive explicit expressions as a result of this interface asymmetry, which inside the conduction band.
