A cube that is 20 nanometer on an edge contains 399,500 silicon atoms, and each silicon atom has 14 electrons and 14 protons. In
the silicon we replace 4 silicon atoms with phosphorus atoms (15 electrons and 15 protons/atom), and we replace 7 silicon atoms with boron atoms (5 electrons and 5 protons/atom). How many "holes" are available to carry current at 300K? Holes look like positive mobile carriers. Three significant digits and fixed point notation.
Total 3 holes are available for conduction of current at 300K.
Explanation:
In order to develop a semiconductor, two type of impurities can be added as given below:
N-type Impurities: Pentavalent impurities e.g. Phosphorous, Arsenic are added to have an additional electron in the structure. Thus a pentavalent impurity creates 1 additional electron.
P-type Impurities: Trivalent impurities e.g. Boron, Aluminium are added to have a positive "hole" in the structure. Thus a trivalent impurity creates 1 hole.
Now for estimation of extra electrons in the impured structure is as
Now for estimation of "holes" in the impured structure is as
Now when the free electrons and "holes" are available in the structure ,the "holes" will be filled by the free electrons therefore
So total 3 "holes" are available for conduction of current at 300K.
As it is outside the focal point it must be real.Real images must be inverted. As it is beyond the centre of curvature it is also beyond 2F which means that the image is inside the centre of curvature ( between F and 2F from the mirror ) As the image is closer to the mirror than the object it must be diminished in size.