Draw a 3-D physical structure of an NMOS transistor. Label four terminals: body, drain, gate, and source. And also label silicon
oxide thickness tox, channel length L and channel width W.
1 answer:
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Answer:
a) 4160 V
b) 12 kW and 81 kVAR
c) 54 kW and 477 kVAR
Explanation:
1) The phase voltage is given as:
The complex power S is given as:
The line current I is given as:
The phase voltage at the sending end is:
The magnitude of the line voltage at the source end of the line (
b) The Total real and reactive power loss in the line is:
The real power loss is 12000 W = 12 kW
The reactive power loss is 81000 kVAR = 81 kVAR
c) The sending power is:
The Real power delivered by the supply = 54000 W = 54 kW
The Reactive power delivered by the supply = 477000 VAR = 477 kVAR
Answer:
(a) the percent thermal efficiency is 27.94%
(b) the temperature of the cooling water exiting the condenser is 31.118°C
Explanation:
Answer:
119.35 mm
Explanation:
Given:
Inside diameter, d = 100 mm
Tensile load, P = 400 kN
Stress = 120 MPa
let the outside diameter be 'D'
Now,
Stress is given as:
stress = Load × Area
also,
Area of hollow pipe =
or
Area of hollow pipe =
thus,
400 × 10³ N = 120 ×
or
D² = tex]\frac{400\times10^3+30\pi\times10^4}{30\pi}[/tex]
or
D = 119.35 mm
Answer:
The displacement from t = 0 to t = 10 s, is -880 m
Distance is 912 m
Explanation:
. . . . . . . . . . A
integrate above equation we get
from information given in the question we have
t = 1 s, s = -10 m
so distance s will be
-10 = 12 - 1 + C,
C = -21
we know that acceleration is given as
[FROM EQUATION A]
Acceleration at t = 4 s, a(4) = -24 m/s^2
for the displacement from t = 0 to t = 10 s,
the distance the particle travels during this time period:
let v = 0,
t = 2 s
Distance