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bearhunter [10]
3 years ago
14

A heat engine is designed to do work. This is possible only if certain relationships between the heats and temperatures at the i

nput and output hold true. Which of the following sets of statements must apply for the heat engine to do work?
A) Qh < Qc and Th < Tc
B) Qh > Qc and Th < Tc
C) Qh < Qc and Th > Tc
D) Qh > Qc and Th > Tc

Part B
Find the work W done by the "ideal" heat engine.
Express W in terms of Qh and Qc
W=___________

Part C
The thermal efficiency e of a heat engine is defined as follows: e = W/Qh
Express the efficiency in terms of Qh and Qc.
e=____________
Physics
1 answer:
Tcecarenko [31]3 years ago
4 0

Answer:

Part A: D

Part B: W = Qh - Qc

Part C: e = 1 - Qc/Qh

Explanation:

The heat engine is the engine that transforms heat (Q) in work (W), and by the second law of the thermodynamics, its efficiency can not be 100%, it means that some heat must be dissipated.

Part A:

The engine works with two sources of heat, one hot (Qh) at a hot temperature (Th) and another cold (Qc) at a cold temperature (Tc). It is necessary so, the hot source will give energy to the fluid of the engine, and the cold source will be the source where these heat will dissipate and the fluid will return to its original temperature. So,

Qh > Qc, and Th > Tc

Part B:

The ideal heat engine is the one that can use the most amount of heat to transform it at work. It is characterized by Qh/Qc = Th/Tc.

The work is the useful energy, so it is the total heat (Qh) less the heat dissipated (Qc):

W = Qh - Qc

Part C:

The effiency is the useful energy divided by the total energy. Because W = Qh - Qc:

e = W/Qh

e = (Qh - Qc)/Qh

e = Qh/Qh - Qc/Qh

e = 1 - Qc/Qh

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Find the electron and hole mobilities, and the resistivity of intrinsic silicon at 300K. Is intrinsic silicon a semiconductor
tino4ka555 [31]

Answer:

Resistivity = 231.481 K Ohm

Yes, Intrinsic Silicon is the semiconductor.

Explanation:

Solution:

At 300K:

Let suppose mobility of electron in intrinsic semiconductor = M_{e}

Mobility of electron in intrinsic semiconductor is:

M_{e}  = 1300 cm^{2}/volt.sec

Let suppose mobility of hole in intrinsic semiconductor = M_{h}

M_{h} = 500 cm^{2}/volt.sec

We know that, intrinsic silicon semiconductor has equal number of holes and electrons. So,

At 300 K

Intrinsic Carrier Concentration = 1.5 x 10^{10}/cm^{3} = C

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σ = C x (M_{h} + M_{e}) e

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So, plugging in the values, we get:

σ = C x (M_{h} + M_{e}) e

σ = 1.5 x 10^{10} x (500 + 1300) x 1.6 x 10^{-19}

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7 0
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Answer:

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Answer:

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See full explanation in the picture. Please rate as brainliest

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