An N-Type semiconductor will always have an excess electron which is more famous for the term valence electrons. It is one of the part which makes a p-n junction the structure of a diode a basic type of semiconductor device. A P-type semiconductor on the other hand has missing electrons or most widely known as valence holes. When applied a voltage bias of correct polarity and intensity between both ends of the junction you are able to close the gap between the junction allowing the excess valence electron to pass through the p type material inducing current with process, in application lighting up the diode.
Answer:
864 mT
Explanation:
The magnetic field due to a long straight wire B = μ₀i/2πR where μ₀ = permeability of free space = 4π × 10⁻⁷ H/m, i = current in wire, and R = distance from center of wire to point of magnetic field.
The magnitude of magnetic field due to the first wire carrying current i = 2.70 A at distance R which is mid-point between the wires is B = μ₀i/2πR.
Since the other wire also carries the same current at distance R, the magnitude of the magnetic field is B = μ₀i/2πR.
The resultant magnetic field at B is B' = B + B = 2B = 2(μ₀i/2πR) = μ₀i/πR
Now R = 2.50 cm/2 = 1.25 cm = 1.25 × 10⁻² m and i = 2.70 A.
Substituting these into B' = μ₀i/πR, we have
B' = 4π × 10⁻⁷ H/m × 2.70 A/π(1.25 × 10⁻² m)
B = 10.8/1.25 × 10⁻⁵ T
B = 8.64 × 10⁻⁵ T
B = 864 × 10⁻³ T
B = 864 mT
The answer is d. i hope this helps :D
<span>The transfer of energy caused a change to the "Phase" of glass
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