Answer:
1) 4.361 x 10 raised to power 8 revolutions
2) 1.744 x 10 raised to power 9 firings
3) 2.18 x 10 raised to power 8 intake strokes
Explanation:
The step by step explanation is as shown in the attachment
Answer:
how many people were asked though
Explanation:
(a) The number of vacancies per cubic centimeter is 1.157 X 10²⁰
(b) ρ = n X (AM) / v X Nₐ
<u>Explanation:</u>
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Given-
Lattice parameter of Li = 3.5089 X 10⁻⁸ cm
1 vacancy per 200 unit cells
Vacancy per cell = 1/200
(a)
Number of vacancies per cubic cm = ?
Vacancies/cm³ = vacancy per cell / (lattice parameter)³
Vacancies/cm³ = 1 / 200 X (3.5089 X 10⁻⁸cm)³
Vacancies/cm³ = 1.157 X 10²⁰
Therefore, the number of vacancies per cubic centimeter is 1.157 X 10²⁰
(b)
Density is represented by ρ
ρ = n X (AM) / v X Nₐ
where,
Nₐ = Avogadro number
AM = atomic mass
n = number of atoms
v = volume of unit cell
Answer:
V = 0.30787 m³/s
m = 2.6963 kg/s
v2 = 0.3705 m³/s
v2 = 6.017 m/s
Explanation:
given data
diameter = 28 cm
steadily =200 kPa
temperature = 20°C
velocity = 5 m/s
solution
we know mass flow rate is
m = ρ A v
floe rate V = Av
m = ρ V
flow rate = V = 
V = Av = 
V = 
V = 0.30787 m³/s
and
mass flow rate of the refrigerant is
m = ρ A v
m = ρ V
m = 
= 
m = 2.6963 kg/s
and
velocity and volume flow rate at exit
velocity = mass × v
v2 = 2.6963 × 0.13741 = 0.3705 m³/s
and
v2 = A2×v2
v2 = 
v2 = 
v2 = 6.017 m/s
Answer:
Made of Silicon.
Explanation:
A diode is a semiconductor device use in mostly electronic appliances. It is two terminals device consisting of a P-N junction formed either in Germanium or silicon crystal.
Diode can be forward biased or reverse biased.
When a diode is forward biased and the applied voltage is increased from zero, hardly any current flows through the device in the beginning.
It is so because the external voltage is being opposed by the internal barrier voltage whose value is 0.7v for silicon and 0.3v for germanium.
If you measure 0.7 V across a diode, the diode is probably therefore made of Silicon.
