Answer:

Explanation:
From the question we are told that:
Temperature of silicon 
Electron concentration 
Electron diffusion coefficient is
Electron mobility is 
Electron current density 
Generally the equation for the semiconductor is mathematically given by

Therefore



Answer:
R = 31.9 x 10^(6) At/Wb
So option A is correct
Explanation:
Reluctance is obtained by dividing the length of the magnetic path L by the permeability times the cross-sectional area A
Thus; R = L/μA,
Now from the question,
L = 4m
r_1 = 1.75cm = 0.0175m
r_2 = 2.2cm = 0.022m
So Area will be A_2 - A_1
Thus = π(r_2)² - π(r_1)²
A = π(0.0225)² - π(0.0175)²
A = π[0.0002]
A = 6.28 x 10^(-4) m²
We are given that;
L = 4m
μ_steel = 2 x 10^(-4) Wb/At - m
Thus, reluctance is calculated as;
R = 4/(2 x 10^(-4) x 6.28x 10^(-4))
R = 0.319 x 10^(8) At/Wb
R = 31.9 x 10^(6) At/Wb
Answer:
radius = 9.1 ×
m
Explanation:
given data
applied load = 5560 N
flexural strength = 105 MPa
separation between the support = 45 mm
solution
we apply here minimum radius formula that is
radius =
.................1
here F is applied load and is length
put here value and we get
radius =
solve it we get
radius = 9.1 ×
m