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Andre45 [30]
3 years ago
13

Why are 75% of Earth's volcanoes in the Pacific Ring of Fire?

Physics
2 answers:
astra-53 [7]3 years ago
4 0

Answer:

these volcanoes are caused by the abundance of convergent plate boundaries around the Pacific, so D.

Explanation:

djverab [1.8K]3 years ago
3 0

Answer:

C There are alot of subduction zones  in the ring of fire

Explanation:

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For a wave, the _____ the amplitude, the _____ energy the wave carries.
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Answer:

<h2>HIGHER & MORE OR LARGER OR MORE </h2>

HENCE, THE ANSWER IS A. :)

Explanation:

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3 years ago
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What is the difference between a wedge and a screw?
Anvisha [2.4K]
<span>A wedge is a double sided screw basically. Therefore, the difference is the number of sides.</span>
7 0
3 years ago
A 12 oz can of soda is left in a car on a hot day. In the morning the soda temperature was 60oF with a gauge pressure of 40 psi.
Neko [114]
In this case, volume of the can remains constant. The relationship between pressure and temperature at constant volume is given by:

P/T = Constant

Then
\frac{ P_{1} }{ T_{1} } = \frac{ P_{2} }{ T_{2} }

Where
P1 = 40 psi
P2 = ?
T1 = 60°F ≈ 289 K
T2 = 90°F ≈ 305 K (note, 363 K is not right)

Substituting;
P_{2} = \frac{ P_{1}  T_{2} }{ T_{1} } = \frac{40*305}{289}  =42.21 psi
3 0
3 years ago
A diode, which allows current to flow in one direction only, consists of two types of semiconductors joined together.
Nata [24]

Answer:

True.

Explanation:

A diode, which allows current to flow in one direction only, consists of two types of semiconductors joined together.

A semiconductor can be defined as a crystalline solid substance that has its conductivity lying between that of a metal and an insulator, due to the effects of temperature or an addition of an impurity. Semiconductors are classified into two main categories;

1. Extrinsic semiconductor.

2. Intrinsic semiconductor.

An intrinsic semiconductor is a crystalline solid substance that is in its purest form and having no impurities added to it. Examples of intrinsic semiconductor are Germanium and Silicon.

In an intrinsic semiconductor, the number of free electrons is equal to the number of holes. Also, in an intrinsic semiconductor the number of holes and free electrons is directly proportional to the temperature; as the temperature increases, the number of holes and free electrons increases and vice-versa.

In an intrinsic semiconductor, each free electrons (valence electrons) produces a covalent bond.

6 0
3 years ago
Consider a uniformly charged sphere of radius Rand total charge Q. The electric field Eout outsidethe sphere (r≥R) is simply tha
AlexFokin [52]

1) Electric potential inside the sphere: \frac{Q}{8\pi \epsilon_0 R}(3-\frac{r^2}{R^2})

2) Ratio Vcenter/Vsurface: 3/2

3) Find graph in attachment

Explanation:

1)

The electric field inside the sphere is given by

E=\frac{1}{4\pi \epsilon_0}\frac{Qr}{R^3}

where

\epsilon_0=8.85\cdot 10^{-12}F/m is the vacuum permittivity

Q is the charge on the sphere

R is the radius of the sphere

r is the distance from the centre at which we compute the field

For a radial field,

E(r)=-\frac{dV(r)}{dr}

Therefore, we can find the potential at distance r by integrating the expression for the electric field. Calculating the difference between the potential at r and the potential at R,

V(R)-V(r)=-\int\limits^R_r  E(r)dr=-\frac{Q}{4\pi \epsilon_0 R^3}\int r dr = \frac{-Q}{8\pi \epsilon_0 R^3}(R^2-r^2)

The potential at the surface, V(R), is that of a point charge, so

V(R)=\frac{Q}{4\pi \epsilon_0 R}

Therefore we can find the potential inside the sphere, V(r):

V(r)=V(R)+\Delta V=\frac{Q}{4\pi \epsilon_0 R}+\frac{-Q}{8\pi \epsilon_0 R^3}(R^2-r^2)=\frac{Q}{8\pi \epsilon_0 R}(3-\frac{r^2}{R^2})

2)

At the center,

r = 0

Therefore the potential at the center of the sphere is:

V(r)=\frac{Q}{8\pi \epsilon_0 R}(3-\frac{r^2}{R^2})\\V(0)=\frac{3Q}{8\pi \epsilon_0 R}

On the other hand, the potential at the surface is

V(R)=\frac{Q}{4\pi \epsilon_0 R}

Therefore, the ratio V(center)/V(surface) is:

\frac{V(0)}{V(R)}=\frac{\frac{3Q}{8\pi \epsilon_0 R}}{\frac{Q}{4\pi \epsilon_0 R}}=\frac{3}{2}

3)

The graph of V versus r can be found in attachment.

We observe the following:

- At r = 0, the value of the potential is \frac{3}{2}V(R), as found in part b) (where V(R)=\frac{Q}{4\pi \epsilon_0 R})

- Between r and R, the potential decreases as -\frac{r^2}{R^2}

- Then at r = R, the potential is V(R)

- Between r = R and r = 3R, the potential decreases as \frac{1}{R}, therefore when the distance is tripled (r=3R), the potential as decreased to 1/3 (\frac{1}{3}V(R))

Learn more about electric fields and potential:

brainly.com/question/8960054

brainly.com/question/4273177

#LearnwithBrainly

7 0
3 years ago
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