Answer:
1970
Explanation:
the answer must enough 20 character, so I...
Answer:
answer for the question :
The ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than 0.15 for uniform etching. Suppose a 200 mm diameter silicon wafer is etched at a rate of 50.0 nm/min in a CF4 plasma.(a) How many Si atoms are removed per minute?(b) What evolution rate of SiF4 does this correspond to in standard cubic centimeters per minute?(c) What minimum flow rate of CF4 should be maintained? "
is explained in the attachment.
Explanation:
Answer:
with a square cross section and length L that can support an end load of F without yielding. You also wish to minimize the amount the beam deflects under load. What is the free variable(s) (other than the material) for this design problem?
a. End load, F.
b. Length, L.
c. Beam thickness, b
d. Deflection, δ
e. Answers b and c.
f. All of the above.