The answer is A. Immediately inform her colleague
Answer:
0.0659 A
Explanation:
Given that :
( saturation current )
at 25°c = 300 k ( room temperature )
n = 2 for silicon diode
Determine the saturation current at 100 degrees = 373 k
Diode equation at room temperature = I = Io 
next we have to determine the value of V at 373 k
q / kT = (1.6 * 10^-19) / (1.38 * 10^-23 * 373) = 31.08 V^-1
Given that I is constant
Io = 
= 0.0659 A
Answer:
a) V(t) = Ldi(t)/dt
b) If current is constant, V = 0
Explanation:
a) The voltage, V(t), across an inductor is proportional to the rate of change of the current flowing across it with time.
If V represents the Voltage across the inductor
and i(t) represents the current across the inductor in time, t.
V(t) ∝ di(t)/dt
Introducing a proportionality constant,L, which is the inductance of the inductor
The general equation describing the voltage across the inductor of inductance, L, as a function of time when a current flows through it is shown below.
V(t) = Ldi(t)/dt ..................................................(1)
b) If the current flowing through the inductor is constant i.e. does not vary with time
di(t)/dt = 0 and hence the general equation (1) above becomes
V(t) = 0
emf generated by the coil is 1.57 V
Explanation:
Given details-
Number of turns of wire- 1000 turns
The diameter of the wire coil- 1 cm
Magnetic field (Initial)= 0.10 T
Magnetic Field (Final)=0.30 T
Time=10 ms
The orientation of the axis of the coil= parallel to the field.
We know that EMF of the coil is mathematically represented as –
E=N(ΔФ/Δt)
Where E= emf generated
ΔФ= change inmagnetic flux
Δt= change in time
N= no of turns*area of the coil
Substituting the values of the above variables
=1000*3.14*0.5*10-4
=.0785
E=0.0785(.2/10*10-3)
=1.57 V
Thus, the emf generated is 1.57 V
