Answer:
i think its the last option
Explanation:
sorry its too late tho
Given Information:
Initial temperature of aluminum block = 26.5°C
Heat flux = 4000 w/m²
Time = 2112 seconds
Time = 30 minutes = 30*60 = 1800 seconds
Required Information:
Rise in surface temperature = ?
Answer:
Rise in surface temperature = 8.6 °C after 2112 seconds
Rise in surface temperature = 8 °C after 30 minutes
Explanation:
The surface temperature of the aluminum block is given by

Where q is the heat flux supplied to aluminum block, k is the conductivity of pure aluminum and α is the diffusivity of pure aluminum.
After t = 2112 sec:

The rise in the surface temperature is
Rise = 35.1 - 26.5 = 8.6 °C
Therefore, the surface temperature of the block will rise by 8.6 °C after 2112 seconds.
After t = 30 mins:

The rise in the surface temperature is
Rise = 34.5 - 26.5 = 8 °C
Therefore, the surface temperature of the block will rise by 8 °C after 30 minutes.
Answer:
Explanation:
- a) Given C [ cal pro fat calc sod]
[140 27 3 13 64]
- P = [cal pro fat calc sod]
[180 4 11 24 662]
- B = [cal pro fat calc sod]
[50 5 1 82 20]
To find C+2P+3B = [140 27 3 13 64] + 2[180 4 11 24 662] + 3[50 5 1 82 20]
= [650 54 28 307 1448]
The entries represent skinless chicken breast , One-half cup of potato salad and One broccoli spear.
Answer:
77.2805 μF
Explanation:
Given data :
V = 2460 V
Q = 191 Kva
<u>Calculate the size of Each capacitor </u>
first step : calculate for the value of Xc
Q = V^2/ Xc
Xc ( capacitive reactance ) = V^2 / Q = 2460^2 / ( 191 * 10^3 ) = 31.683 Ω
Given that 1 / 2πFc = 31.683
∴ C ( size of each capacitor ) =
= 77.2805 μF
Answer:
d) A mosfet
Explanation:
MOSFET is the most common type of insulated gate Field Effect Transistor (FET), used in electronic circuits and it stands for Metal Oxide Semiconductor Field Effect Transistor.
To configure MOSFET to act as an amplifier, a small AC signal is applied, which is superimposed on to DC bias at the gate input, then the MOSFET will act as a linear amplifier.
Therefore, the correct option is (d) A mosfet