Since we are ignoring air resistance which is a non-conservative force, the potential energy will be completely converted into kinetic energy, resulting in a final kinetic energy of
.
Answer:
Corpus callosum
Explanation:
The corpus callosum is the tissue in the brain that helps in the connection between the right and left cerebral hemisphere.
The corpus callosum consists of about 200 million axons of thick nerve cells which helps in combining sensory and cognitive signals between the two hemispheres.
Almost everyone is born with this tissue because an absence of deficiency of it results in serious neurological problems such as difficulty in learning and other cognitive related diseases.
To solve this problem it is necessary to apply the concepts related to the principle of superposition and the equations of destructive and constructive interference.
Constructive interference can be defined as
Where
m= Any integer which represent the number of repetition of spectrum
= Wavelength
d = Distance between the slits.
= Angle between the difraccion paterns and the source of light
Re-arrange to find the distance between the slits we have,
Therefore the number of lines per millimeter would be given as
Therefore the number of the lines from the grating to the center of the diffraction pattern are 380lines per mm
Answer:
A scalar is a quantity that is fully described by a magnitude only. It is described by just a single number. Some examples of scalar quantities include speed, volume, mass, temperature, power, energy, and time.
Examples of scalar quantity are:
Distance.
Speed.
Mass.
Temperature.
Energy.
Work.
Volume.
Area.
Explanation:
please mark me as brainliest thank you
Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
