Answer:
3 significant figures are in 1.02m
Explanation:
Answer:
a)11.25 J
b)Number of revolution = 1
Explanation:
Given that
Radius ,r= 0.8 m
m= 0.3 kg
Initial speed ,u= 10 m/s
final speed ,v= 5 m/s
a)
Initial energy


KEi= 15 J
Final kinetic energy


KEf=3.75 J
The energy transformed from mechanical to internal = 15 - 3.75 J = 11.25 J
b)
The minimum value to complete the circular arc

Now by putting the values

V= 2.82 m/s
So kinetic energy KE


KE=1.19 J
ΔKE= KEi - KE
ΔKE= 15- 1.19 J
ΔKE=13.80 J
The minimum energy required to complete 2 revolutions = 2 x 11.25 J
= 22.5 J
Here 22.5 J is greater than 13.8 J.So the particle will complete only one revolution.
Number of revolution = 1
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Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA