What is the never repeat rule

1 answer:

4 0

Don't repeat yourself (DRY, or sometimes do not repeat yourself) is a principle of software development aimed at reducing repetition of software patterns,[1] replacing it with abstractions or using data normalization to avoid redundancy.

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BCC lithium has a lattice parameter of 3.5089 3 10–8 cm and contains one vacancy per 200 unit cells. Calculate (a) the number of

Tanya [424]

(a) The number of vacancies per cubic centimeter is 1.157 X 10²⁰

(b) ρ = n X (AM) / v X Nₐ

Explanation:

Given-

Lattice parameter of Li = 3.5089 X 10⁻⁸ cm

1 vacancy per 200 unit cells

Vacancy per cell = 1/200

(a)

Number of vacancies per cubic cm = ?

Vacancies/cm³ = vacancy per cell / (lattice parameter)³

Vacancies/cm³ = 1 / 200 X (3.5089 X 10⁻⁸cm)³

Vacancies/cm³ = 1.157 X 10²⁰

Therefore, the number of vacancies per cubic centimeter is 1.157 X 10²⁰

(b)

Density is represented by ρ

ρ = n X (AM) / v X Nₐ

where,

Nₐ = Avogadro number

AM = atomic mass

n = number of atoms

v = volume of unit cell

4 0

3 years ago

The Torricelli's theorem states that the (velocity—pressure-density) of liquid flowing out of an orifice is proportional to the

Sergeeva-Olga [200]

Answer:

The correct answer is 'velocity'of liquid flowing out of an orifice is proportional to the square root of the 'height' of liquid above the center of the orifice.

Explanation:

Torricelli's theorem states that

$v_{exit}=\sqrt{2gh}$

where

$v_{exit}$ is the velocity with which the fluid leaves orifice

$h$ is the head under which the flow occurs.

Thus we can compare the given options to arrive at the correct answer

Velocity is proportional to square root of head under which the flow occurs.

4 0

3 years ago

Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and lambda =0 (channel length modulation parameter)

AveGali [126]

The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.

Explanation:

Since $V_{ds}$ > $V_{gs} - Vt$ because $V_{gs}$ > Vt.
By the saturation region the MOSFET is operating.
A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
The core of this is integrated circuit.
It is fabricated and designed in an individual chips due to tiny sizes.