Answer: The exit temperature of the gas in deg C is
.
Explanation:
The given data is as follows.
= 1000 J/kg K, R = 500 J/kg K = 0.5 kJ/kg K (as 1 kJ = 1000 J)
= 100 kPa, 

We know that for an ideal gas the mass flow rate will be calculated as follows.

or, m = 
=
= 10 kg/s
Now, according to the steady flow energy equation:




= 5 K
= 5 K + 300 K
= 305 K
= (305 K - 273 K)
= 
Therefore, we can conclude that the exit temperature of the gas in deg C is
.
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
>
because
> Vt. - By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.