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nordsb [41]
3 years ago
13

What is a semiconductor whose electrical properties are based on the electronic structure inherent in the pure materials? MATSE

81
Engineering
1 answer:
OleMash [197]3 years ago
6 0

Answer:

intrinsic semiconductors

Explanation:

An intrinsic semiconductor is also known as a pure conductor. In such a semiconductor there are no impurities, that is why it is said to be pure.

It has some of these properties:

1. Electrical conductivity is only based on temperature

2. The quantity of electrons is the same as the number of holes in the valence bond

3. Electrical conductivity is not on the high side

4. These materials exist in their pure forms.

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For the SR-latch below high levels of Set and Reset result in Q= 1 and 0, respectively. The next state is unknown when both inpu
dusya [7]

Answer:

hello your question lacks the required image attached to this answer is the image required

answer :  NOR1(q_) wave is complementary to NOR2(q)

Explanation:

Note ; NOR 2 will be addressed as q in the course of this solution while NOR 1 will be addressed as q_

Initial state is unknown i.e q = 0 and q_= 1

from the diagram the waveform reset and set

= from 0ns to 20ns reset=1 and set=0.from the truth table considering this given condition q=0 and q_bar=1 while  

from 30ns to 50ns reset=0 and set=1.from the truth table considering this condition q=1 and q_bar=1.so from 35ns also note there is a delay of 5 ns for the NOR gate hence the NOR 2 will be higher ( 1 )

From 50ns to 65ns both set and reset is 0.so NOR2(q)=0.

From 65 to 75 set=1 and reset=0,so our NOR 2(q)=1 checking from the truth table

also  from 75 to 90 set=1 and reset=1 , NOR2(q) is undefined "?" and is mentioned up to 95ns.

since q_ is a complement of q, then NOR1(q_) wave is complementary to NOR2(q)

3 0
3 years ago
An inventor claims to have developed a food freezer that at steady state requires a power input of 0.25 kW to extract energy by
Snowcat [4.5K]

Answer:

The claim is false. (COP_{real} > COP_{ideal}).

Explanation:

The real coefficient of performance of the food freezer is:

COP_{real} = \frac{\dot Q_{L}}{\dot W}

COP_{real} = \frac{3\,kW}{0.25\,kW}

COP_{real} = 12

The ideal coefficient of performance, that is, when freezer has a reversible process, is:

COP_{ideal} = \frac{T_{L}}{T_{H}-T_{L}}

COP_{ideal} = \frac{270\,K}{293\,K-270\,K}

COP_{ideal} = 11.739

A real freezer has a coefficient of performance lesser than or equal to ideal coefficient of performance. Since supposed real coefficient of performance is greater than ideal coefficient of performance. The claim is proved to be false.

7 0
4 years ago
Hola nesecito que me digan las nesecidades de seguridad en un corto resumen
Inessa [10]

Answer:

la red necesita seguridad contra atacantes y piratas informáticos. La seguridad de la red incluye dos valores básicos. El primero de la seguridad de la información de datos es proteger la información del acceso no autorizado y la pérdida. y el segundo es la seguridad informática para proteger los datos y frustrar a los piratas informáticos.

Explanation:

Espero que esto ayude a marcar el MÁS CEREBRAL !!!

5 0
3 years ago
How do you connect several springs to increase the equivalent stiffness? What is one example from industry or other real-life si
Masteriza [31]

Answer: the answer for that question is the springs should be connected in series.

-we can consider the segments of a helix arrow as springs in series

Explanation:

a characteristic  of this system of springs is that, performing a free body analysis for  each of the springs follows that, the force applied to each of  the springs is the same.

This is the fundamental characteristic of the springs  that act in "series"

7 0
3 years ago
Find values of the intrinsic carrier concentration n for silicon at –70° 0° 20° C, 100° C, and C. At 125° each temperature, what
Dominik [7]

Answer:

Part (i) at –70° C, intrinsic carrier concentration of silicon is 2.865 x 10⁵ carriers/cm³ and fraction of the atoms ionized is 5.37 x 10⁻¹⁸

Part (ii) at 0° C, intrinsic carrier concentration of silicon is 1.533 x 10⁹ carriers/cm³ and fraction of the atoms ionized is 3.067 x 10⁻¹⁴

Part (iii) at 20° C, intrinsic carrier concentration of silicon is 8.652 x 10⁹ carriers/cm³ and fraction of the atoms ionized is 1.731 x 10⁻¹³

Part (iv) at 100° C, intrinsic carrier concentration of silicon is 1.444 x 10¹² carriers/cm³ and fraction of the atoms ionized is 2.889 x 10⁻¹¹

Part (iv) at 125° C, intrinsic carrier concentration of silicon is 4.754 x 10¹² carriers/cm³ and fraction of the atoms ionized is 9.508 x 10⁻¹¹

Explanation:

ni^2 = BT^3(e^{\frac{-E_g}{KT}})\\\\ni = \sqrt{ BT^3(e^{\frac{-E_g}{KT}})}

where;

B = 5.4 x 10⁻³¹

Eg = 1.12 ev

K = 8.62 x 10⁻⁵ eV/K

T = (273 + ⁰C) K

Number of atoms in silicon crystal = 5 x 10²² atoms/cm³

Part (i) For –70° C, T = (273 -70 ⁰C)K = 203 K

ni = \sqrt{ 5.4*10^{31}*203^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*203}})}} \ =2.685*10^5 \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{2.685*10^5}{5 *10^{22}} = 5.370 *10^{-18}

Part (ii) For 0° C, T = (273 +0 ⁰C)K = 273 K

ni = \sqrt{ 5.4*10^{31}*273^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*273}})}} \ =1.533*10^9 \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{1.533*10^9}{5 *10^{22}} = 3.067 *10^{-14}

Part (iii) For 20° C, T = (273 + 20 ⁰C)K = 293 K

ni = \sqrt{ 5.4*10^{31}*293^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*293}})}} \ =8.652*10^9 \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{8.652*10^9}{5 *10^{22}} = 1.731 *10^{-13}

Part (iv) For 100° C, T = (273 + 100 ⁰C)K = 373 K

ni = \sqrt{ 5.4*10^{31}*373^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*373}})}} \ =1.444*10^{12} \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{1.444*10^{12}}{5 *10^{22}} = 2.889 *10^{-11}

Part (v) For 125° C, T = (273 + 125 ⁰C)K = 398 K

ni = \sqrt{ 5.4*10^{31}*398^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*398}})}} \ =4.754*10^{12} \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{4.754*10^{12}}{5 *10^{22}} = 9.508 *10^{-11}

7 0
3 years ago
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