An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric (Pr = 25) has a flat band voltage of 0.5 V,
and substrate doping of 1018 cm-3. The intrinsic carrier concentration is 1011 cm-3, effective electron channel mobility is 250 cm2/Vs, and Pr = 15. What is the drive current for a 50 om wide and 2 om long device at VG = 3 V and VD = 0.05 V? What is the saturation current at this gate bias?
1 answer:
You might be interested in
Answer:
The answer is "2 m/s".
Explanation:
The triangle from of the right angle:
Differentiating the above equation:
The project is going to scope if the situation happens. Option A is correct.
<h3 /><h3>What is the function of a project manager?</h3>Project managers are in charge of organizing, planning, and guiding the execution of certain projects for an organization .
As the project manager, you grant a team member's request to rearrange their work in a way they believe will increase productivity.
However, this modification interferes with another team member's workflow since they now have to complete two more activities that are unrelated to the project's objective. The project will be within its scope.
Hence option A is correct.
To learn more about the project manager refer;
#SPJ1
