An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric (Pr = 25) has a flat band voltage of 0.5 V,
and substrate doping of 1018 cm-3. The intrinsic carrier concentration is 1011 cm-3, effective electron channel mobility is 250 cm2/Vs, and Pr = 15. What is the drive current for a 50 om wide and 2 om long device at VG = 3 V and VD = 0.05 V? What is the saturation current at this gate bias?
1 answer:
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Answer:
d. all of the above
Explanation:
There are two components of acceleration for a particle moving in a circular path, radial and tangential acceleration.
The radial acceleration is given by;
Where;
V is the velocity of the particle
R is the radius of the circular path
This radial acceleration is always directed towards the center of the path, perpendicular to the tangential acceleration and negative.
Therefore, from the given options in the question, all the options are correct.
d. all of the above