An n- channel enhancement- mode MOSFET with 50 nm thick HfO2 high- k gate dielectric (Pr = 25) has a flat band voltage of 0.5 V,
and substrate doping of 1018 cm-3. The intrinsic carrier concentration is 1011 cm-3, effective electron channel mobility is 250 cm2/Vs, and Pr = 15. What is the drive current for a 50 om wide and 2 om long device at VG = 3 V and VD = 0.05 V? What is the saturation current at this gate bias?
1 answer:
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Answer:
a) Cr = Co - Fx / D
b) ΔC / Δx = ( CR - Cr ) / ( xR - xRo )
Explanation:
A) Derive an expression for the profile c(r) inside the tissue
F = DΔC / X = D ( Co - Cr ) / X ------ 1
where : F = flux , D = drug diffusion coefficient
X = radial distance between Ro and R
Hence : Cr = Co - Fx / D
B) Express the diffusive flux at outer surface of the balloon
Diffusive flux at outer surface = ΔC / Δx = CR - Cr / xR - xRo
