Answer:
2.5=1500/Whp=> Whp=600 kWh
delWgain=1500-600=900 kWh
Money saved= 900* 6tk*=5400 tk
Explanation:
A.
H = Aeσ^4
Using the stefan Boltzmann law
When we differentiate
dH/dT = 4AeσT³
dH/dT = 4(0.15)(0.9)(5.67)(10^-8)(650)³
= 8.4085
Exact error = 8.4085x20
= 168.17
H(650) = 0.15(0.9)(5.67)(10^-8)(650)⁴
= 1366.376watts
B.
Verifying values
H(T+ΔT) = 0.15(0.9)(5.67)(10)^-8(670)⁴
= 1542.468
H(T+ΔT) = 0.15(0.9)(5.67)(10^-8)(630)⁴
= 1205.8104
Error = 1542.468-1205.8104/2
= 168.329
ΔT = 40
H(T+ΔT) = 0.15(0.9)(5.67)(10)^-8(690)⁴
= 1735.05
H(T-ΔT) = 0.15(0.9)(5.67)(10^-8)(610)⁴
= 1735.05-1059.83/2
= 675.22/2
= 337.61
Answer:
The difference of head in the level of reservoir is 0.23 m.
Explanation:
For pipe 1

For pipe 2

Q=2.8 l/s
![Q=2.8\times 10^{-3]](https://tex.z-dn.net/?f=Q%3D2.8%5Ctimes%2010%5E%7B-3%5D)
We know that Q=AV




head loss (h)

Now putting the all values

So h=0.23 m
So the difference of head in the level of reservoir is 0.23 m.
Answer: 24 pA
Explanation:
As pure silicon is a semiconductor, the resistivity value is strongly dependent of temperature, as the main responsible for conductivity, the number of charge carriers (both electrons and holes) does.
Based on these considerations, we found that at room temperature, pure silicon resistivity can be approximated as 2.1. 10⁵ Ω cm.
The resistance R of a given resistor, is expressed by the following formula:
R = ρ L / A
Replacing by the values for resistivity, L and A, we have
R = 2.1. 10⁵ Ω cm. (10⁴ μm/cm). 50 μm/ 0.5 μm2
R = 2.1. 10¹¹ Ω
Assuming that we can apply Ohm´s Law, the current that would pass through this resistor for an applied voltage of 5 V, is as follows:
I = V/R = 5 V / 2.1.10¹¹ Ω = 2.38. 10⁻¹¹ A= 24 pA