Answer: ε₁+ε₂+ε₃ = 0
Explanation: Considering the initial and final volume to be constant which gives rise to the relation:-
l₀l₀l₀=l₁l₂l₃
taking natural log on both sides
Considering the logarithmic Laws of division and multiplication :
ln(AB) = ln(A)+ln(B)
ln(A/B) = ln(A)-ln(B)
Use the image attached to see the definition of true strain defined as
ln(l1/1o)= ε₁
which then proves that ε₁+ε₂+ε₃ = 0
Answer:
Q(h=200)=0.35W
Q(h=3000)=5.25W
Explanation:
first part h=200W/Km^2
we must use the convection heat transfer equation for the chip
Q=hA(Ts-T∞)
h=
convective coefficient=200W/m2 K
A=Base*Leght=5mmx5mm=25mm^2
Ts=temperature of the chip=85C
T∞=temperature of coolant=15C
Q=200x2.5x10^-5(85-15)=0.35W
Second part h=3000W/Km^2
Q=3000x2.5x10^-5(85-15)=5.25W
Answer:
451 kj/kg
Explanation:
Velocity = 139m/s
Temperature = 70⁰C
T = 343K
M1 = v/√prt
= 130/√1.4x287x343
= 130/√137817.4
= 130/371.2
= 0.350
T1/To1 = 0.9760
From here we cross multiply and then make To1 the subject of the formula
To1 = T1/0.9760
To1 = 343/0.9760
To1 = 351.43
Then we go to the rayleigh table
At m = 0.35
To1/To* = 0.4389
To* = 351.43/0.4389
= 800k
M2 = 1
Maximum amount of heat
1.005(800-351.43)
= 450.8kj/kg
= 452kj/kg
Answer:
The steady-state temperature difference is 2.42 K
Explanation:
Rate of heat transfer = kA∆T/t
Rate of heat transfer = 6 W
k is the heat transfer coefficient = 152 W/m.K
A is the area of the square silicon = width^2 = (7/1000)^2 = 4.9×10^-5 m^2
t is the thickness of the silicon = 3 mm = 3/1000 = 0.003 m
6 = 152×4.9×10^-5×∆T/0.003
∆T = 6×0.003/152×4.9×10^-5 = 2.42 K
