Chapter 3 skills and application

Burn rate can be affected by: A. Variations in chamber pressure B. Variations in initial grain temperature C. Gas flow velocity

Digiron [165]

Answer: D) All of the above

Explanation:

Burn rate can be affected by all of the above reasons as, variation in chamber pressure because the pressure are dependence on the burn rate and temperature variation in initial gain can affect the rate of the chemical reactions and initial gain in the temperature increased the burning rate. As, gas flow velocity also influenced to increasing the burn rate as it flowing parallel to the surface burning. Burn rate is also known as erosive burning because of the variation in flow velocity and chamber pressure.

4 0

3 years ago

Miller Indices:

svetlana [45]

Answer:

A) The sketches for the required planes were drawn in the first attachment [1 2 1] and the second attachment [1 2 -4].

B) The closest distance between planes are d₁₂₁=a/√6 and d₁₂₋₄=a/√21 with lattice constant a.

C) Five posible directions that electrons can move on the surface of a [1 0 0] silicon crystal are: |0 0 1|, |0 1 3|, |0 1 1|, |0 3 1| and |0 0 1|.

Compleated question:

1. Miller Indices:

a. Sketch (on separate plots) the (121) and (12-4) planes for a face centered cubic crystal structure.

b. What are the closest distances between planes (called d₁₂₁ and d₁₂₋₄)?

c. List five possible directions (using the Miller Indices) the electron can move on the surface of a (100) silicon crystal.

Explanation:

A)To draw a plane in a face centered cubic lattice, you have to follow these instructions:

1- the cube has 3 main directions called "a", "b" and "c" (as shown in the first attachment) and the planes has 3 main coeficients shown as [l m n]

2- The coordinates of that plane are written as: π:[1/a₀ 1/b₀ 1/c₀] (if one of the coordinates is 0, for example [1 1 0], c₀ is ∞, therefore that plane never cross the direction c).

3- Identify the points a₀, b₀, and c₀ at the plane that crosses this main directions and point them in the cubic cell.

4- Join the points.

In this case, for [1 2 1]:

$l=1=1/a_0 \rightarrow a_0=1$

$m=2=2/b_0 \rightarrow b_0=0.5$

$n=1=1/c_0 \rightarrow c_0=1$

for $[1 2 \overline{4}]$ :

$l=1=1/a_0 \rightarrow a_0=1$

$m=2=2/b_0 \rightarrow b_0=0.5$

$n=\overline{4}=-4/c_0 \rightarrow c_0=-0.25$

B) The closest distance between planes with the same Miller indices can be calculated as:

With $\pi:[l m n]$ ,the distance is $d_{lmn}= \displaystyle \frac{a}{\sqrt{l^2+m^2+n^2}}$ with lattice constant a.

In this case, for [1 2 1]:

$d_{121}= \displaystyle \frac{a}{\sqrt{1^2+2^2+1^2}}=\frac{a}{\sqrt{6}}=0.41a$

for $[1 2 \overline{4}]$ :

$d_{12\overline{4}}= \displaystyle \frac{a}{\sqrt{1^2+2^2+(-4)^2}}=\frac{a}{\sqrt{21}}=0.22a$

C) The possible directions that electrons can move on a surface of a crystallographic plane are the directions contain in that plane that point in the direction between nuclei. In a silicon crystal, an fcc structure, in the plane [1 0 0], we can point in the directions between the nuclei in the vertex (0 0 0) and e nuclei in each other vertex. Also, we can point in the direction between the nuclei in the vertex (0 0 0) and e nuclei in the center of the face of the adjacent crystals above and sideways. Therefore:

dir₁=|0 0 1|

dir₂=|0 0.5 1.5|≡|0 1 3|

dir₃=|0 1 1|

dir₄=|0 1.5 0.5|≡|0 3 1|

dir₅=|0 0 1|

5 0

3 years ago

When you hover over an edge or point, you are activating ____________ in SketchUp?

7nadin3 [17]

Answer:b

hope thiss helps

Explanation

I took the quiz

7 0

2 years ago

Read 2 more answers

Three-dimensional measuring references all of these EXCEPT:

cricket20 [7]

Except the Table of Contents

4 0

3 years ago

A budding electronics hobbyist wants to make a simple 1.0-nF capacitor for tuning her crystal radio, using two sheets of aluminu

bazaltina [42]

Answer:

a. 8 sheets of paper is needed between her plates to get the proper capacitance

b. Area of Aluminum Foil needed = 0.45m²

c. To keep a 1.0-nF, a larger area of Teflon is required.

Explanation:

a.

First, we need to calculate the distance between two plates.

This is given by

d = Kε0A/C

Where

K = 3

ε0 = Physical Constant = 8.854 * 10^-12 C²/Nm²

A = Area = 22 * 28 = 616cm² = 0.0616m²

C = 1.0-nF = 1 * 10^-12F

So, d = (3 * 8.854 * 10^-12 C²/Nm² * 0.0616) / (1 * 10^-12F)

d = 1.64 * 10^-3m

d = 1.64mm

Now, that the distance has been solved.

The Number of Sheets, N is given by

N = d/d,sheet where d, sheet =the sheet thickness = 0.2mm

N = 1.64/0.2

N = 8.2

N = 8 sheets --- Approximated

b.

Here, she's changed the diameter of the sheets to 12mm

Well make use of the formula in (a) above

Using d = Kε0A/C

Where

d = 12 * 10^-3m

Other constraints remain unchanged

Make A the subject of formula

A = dC/Kε0

A = (12 * 10^-3m * 1 * 10^-12F)/(3 * 8.854 * 10^-12 C²/Nm²)

A= 0.45m²

c. From (b) above

A ∝ 1/K

As the dielectric constant increase, the area decreases

The dielectric constant of a Teflon is 2.1

This means that if she used a Teflon instead, the area will be larger.

So, to keep a 1.0-nF, a larger area of Teflon is required.

7 0

3 years ago