Answer:
Explanation:
The additional power consumption of the car when v :
35 mi/h = 0.464hp
70 mi/h = 3.71hp.
For the step by step explanation of how we arrived at these answers, please go through the attached files.
Answer:
note:
solution is attached in word form due to error in mathematical equation. furthermore i also attach Screenshot of solution in word due to different version of MS Office please find the attachment
Answer:
Check the explanation
Explanation:
Code
.ORIG x4000
;load index
LD R1, IND
;increment R1
ADD R1, R1, #1
;store it in ind
ST R1, IND
;Loop to fill the remaining array
TEST LD R1, IND
;load 10
LD R2, NUM
;find tw0\'s complement
NOT R2, R2
ADD R2, R2, #1
;(IND-NUM)
ADD R1, R1, R2
;check (IND-NUM)>=0
BRzp GETELEM
;Get array base
LEA R0, ARRAY
;load index
LD R1, IND
;increment index
ADD R0, R0, R1
;store value in array
STR R1, R0,#0
;increment part
INCR
;Increment index
ADD R1, R1, #1
;store it in index
ST R1, IND
;go to test
BR TEST
;get the 6 in R2
;load base address
GETELEM LEA R0, ARRAY
;Set R1=0
AND R1, R1,#0
;Add R1 with 6
ADD R1, R1, #6
;Get the address
ADD R0, R0, R1
;Load the 6th element into R2
LDR R2, R0,#0
;Display array contents
PRINT
;set R1 = 0
AND R1, R1, #0
;Loop
;Get index
TOP ST R1, IND
;Load num
LD R3,NUM
;Find 2\'s complement
NOT R3, R3
ADD R3, R3,#1
;Find (IND-NUM)
ADD R1, R1,R3
;repeat until (IND-NUM)>=0
BRzp DONE
;load array address
LEA R0, ARRAY
;load index
LD R1, IND
;find address
ADD R3, R0, R1
;load value
LDR R1, R3,#0
;load 0x0030
LD R3, HEX
;convert value to hexadecimal
ADD R0, R1, R3
;display number
OUT
;GEt index
LD R1, IND
;increment index
ADD R1, R1, #1
;go to top
BR TOP
;stop
DONE HALT
;declaring variables
;set limit
NUM .FILL 10
;create array
ARRAY .BLKW 10 #0
;variable for index
IND .FILL 0
;hexadecimal value
HEX .FILL x0030
;stop
.END
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
> 
because 
> Vt. - By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.
H is the answer
Step by step
