Answer:
6.37 inch
Explanation:
Thinking process:
We need to know the flow rate of the fluid through the cross sectional pipe. Let this rate be denoted by Q.
To determine the pressure drop in the pipe:
Using the Bernoulli equation for mass conservation:

thus

The largest pressure drop (P1-P2) will occur with the largest f, which occurs with the smallest Reynolds number, Re or the largest V.
Since the viscosity of the water increases with temperature decrease, we consider coldest case at T = 50⁰F
from the tables
Re= 2.01 × 10⁵
Hence, f = 0.018
Therefore, pressure drop, (P1-P2)/p = 2.70 ft
This occurs at ae presure change of 1.17 psi
Correlating with the chart, we find that the diameter will be D= 0.513
= <u>6.37 in Ans</u>
Answer:
Explanation:
Given
charge is placed at 
another charge of
is at 
We know that Electric field due to positive charge is away from it and Electric field due to negative charge is towards it.
so net electric field is zero somewhere beyond negatively charged particle
Electric Field due to
at some distance r from it

Now Electric Field due to
is

Now 



thus 
Thus Electric field is zero at some distance r=1.43 cm right of
Answer:
6.99 x 10⁻³ m³ / s
Explanation:
Th e pressure difference at the two ends of the delivery pipe due to atmospheric pressure and water column will cause flow of water.
h = difference in the height of water column at two ends of delivery pipe
6 - 1 = 5 m
Velocity of flow of water
v = √2gh
= √ (2 x 9.8 x 5)
= 9.9 m /s
Volume of water flowing per unit time
velocity x cross sectional area
= 9.9 x 3.14 x .015²
= 6.99 x 10⁻³ m³ / s
R = distance
dr/dt speed or with a direction, velocity
d(dr/dt)/dt = the time derivative of the velocity is called acceleration.
Speed is a scalar. Acceleration is a vector.
Answer:
Made of Silicon.
Explanation:
A diode is a semiconductor device use in mostly electronic appliances. It is two terminals device consisting of a P-N junction formed either in Germanium or silicon crystal.
Diode can be forward biased or reverse biased.
When a diode is forward biased and the applied voltage is increased from zero, hardly any current flows through the device in the beginning.
It is so because the external voltage is being opposed by the internal barrier voltage whose value is 0.7v for silicon and 0.3v for germanium.
If you measure 0.7 V across a diode, the diode is probably therefore made of Silicon.