Answer:
Solution:
Note: Refer the diagram
Drag coefficient data for selected objects table at
Hemisphere (open end facing flow), 
Substituting all parameters,
Then,
![\begin{aligned}&V_{b}=V_{w}-\left[\frac{2 F_{R}}{\rho\left(C_{D, w} A_{w}+C_{D, B} A_{b}\right)}\right]^{\frac{1}{2}} \dots\\&V_{w}=24 \times 1000 \times \frac{1}{3600}\\&V_{w}=6.67 \frac{ m }{ s }\end{aligned}](https://tex.z-dn.net/?f=%5Cbegin%7Baligned%7D%26V_%7Bb%7D%3DV_%7Bw%7D-%5Cleft%5B%5Cfrac%7B2%20F_%7BR%7D%7D%7B%5Crho%5Cleft%28C_%7BD%2C%20w%7D%20A_%7Bw%7D%2BC_%7BD%2C%20B%7D%20A_%7Bb%7D%5Cright%29%7D%5Cright%5D%5E%7B%5Cfrac%7B1%7D%7B2%7D%7D%20%5Cdots%5C%5C%26V_%7Bw%7D%3D24%20%5Ctimes%201000%20%5Ctimes%20%5Cfrac%7B1%7D%7B3600%7D%5C%5C%26V_%7Bw%7D%3D6.67%20%5Cfrac%7B%20m%20%7D%7B%20s%20%7D%5Cend%7Baligned%7D)
And the equation becomes,
![\begin{aligned}&V_{b}=6.67-\left[\frac{2 \times 5.52}{1.23(1.42 \times 1.17+1.2 \times 0.3)}\right]^{\frac{1}{2}}\\&V_{b}=6.67-2.11\\&V_{b}=4.56 \frac{ m }{ s }\end{aligned}](https://tex.z-dn.net/?f=%5Cbegin%7Baligned%7D%26V_%7Bb%7D%3D6.67-%5Cleft%5B%5Cfrac%7B2%20%5Ctimes%205.52%7D%7B1.23%281.42%20%5Ctimes%201.17%2B1.2%20%5Ctimes%200.3%29%7D%5Cright%5D%5E%7B%5Cfrac%7B1%7D%7B2%7D%7D%5C%5C%26V_%7Bb%7D%3D6.67-2.11%5C%5C%26V_%7Bb%7D%3D4.56%20%5Cfrac%7B%20m%20%7D%7B%20s%20%7D%5Cend%7Baligned%7D)
Thus the floyds travels at 
wind speed.
Answer:Could you give a picture or something so I could answer.
Explanation:
Answer:
203.0160
Explanation:
Because you add then subtract then multiply buy 7 the subtract then divide then you add that to the other numbers you got than boom
Answer: a) 0.24E+20 m-3. b) p-type extrinsic.
Explanation:
The current density in a semiconductor is composed by two types of charge carriers: electrons and holes.
This parameter, is proportional to the Electric field within the semiconductor, being the proportionality constant, the electrical conductivity of the material, that takes into account the charge carrier concentrations, and the mobility for each type.
The expression for electrical conductivity is as follows:
σ = q . ne . µe + q . np . µp
Replacing by the given values, and the value of q (charge of an electron), we can get the only unknown that remains, ne , as follows:
ne =( σ – (q . np . µp)) / q µe = (13 (Ω.m)-1 – (1.6E-19) coul(4.0E+20) m-3.0.18) m2/V-s /( (1.6E-19).0.38) coul.m2/V-s
ne = 0.24E+20.
As ne is smaller than np, this means that the semiconductor behaves like a p-type extrinsic one.
Answer:Discrete system are those system which change the state at the discrete point of time and continuous system are those which have state change at continuous period of time.
Explanation:
- The major difference between discrete and continuous system is that, discrete system has state change over a discontinuous time period whereas the change of state in continuous system is over a continuous time period .
- Variations can be found in the discrete system signal but in continuous system variation cannot be found input and output signal.
- Example:-
Discrete system:-employees reporting at office at different time like
9:10am, 9:15am etc
<u> Continuous system</u>:-the water flow over a dam in particular quantity
