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Lina20 [59]
2 years ago
6

a circular pile, 19 m long is driven into a homogeneous sand layer. The piles width is 0.5 m. The standard penetration resistanc

e near the vicinity of the pile is 25. Calculate the allowable bearing force (Qa) of the pile. Use
Engineering
1 answer:
Elena L [17]2 years ago
5 0

Answer:

Point force (Qp) = 704 kn/m²

Explanation:

Given:

length = 19 m

Width = 0.5 m

fs = 4

Vicinity of the pile = 25

Find:

Point force (Qp)

Computation:

Point force (Qp) = fs²(l+v)

Point force (Qp) = 4²(25+19)

Point force (Qp) = 16(44)

Point force (Qp) = 704 kn/m²

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What is the angular velocity (in rad/s) of a body rotating at N r.p.m.?
Darina [25.2K]

Answer:

0.1047N

Explanation:

To solve this problem we must remember the conversion factors, remembering that 1 revolution equals 2π radians and 1min equals 60s

N\frac{rev}{min} \frac{2\pi }{1rev} \frac{1min}{60} =N\frac{2\pi }{60} =0.1047N

in conclusion, to know how many rad / s an element rotates which is expressed in Rev / min we must only multiply by 0.1047

3 0
3 years ago
Technician A says that the paper test could detect a burned valve. Technician B says that a grayish white stain on the engine co
Bumek [7]

Answer:

Both Technician A and B are correct.

Explanation: Both are correct, but keep note that different color coolants leave different color  stains.

6 0
3 years ago
A dielectric material, such as Teflon®, is placed between the plates of a parallel-plate capacitor without altering the structur
Lina20 [59]

Answer: The electric field decreases because of the insertion of the Teflon.

Explanation:

If the charge on the capacitor is held fixed, the electric field as a consequence of this charge distribution (directed from the positive charged plate to the negative charged one remains unchanged.

However, as the Teflon is a dielectric material, even though doesn't allow the free movement of the electrons as an answer to an applied electric field, it allows that the electrons be displaced from the equilibrium position, leaving a local negative-charged zone close to the posiitive plate of the capacitor, and an equal but opposite charged layer close to the negative plate.

In this way, a internal electric field is created, that opposes to the external one due to the capacitor, which overall effect is diminishing the total electric field, reducing the voltage between the plates, and  increasing the capacitance proportionally to the dielectric constant of the Teflon.  

8 0
3 years ago
Which sentence is correct about the exergy of an empty (pressure around zero Pascal) tank with a volume of V, located in an envi
sineoko [7]

Answer:

The correct option is;

c.  the exergy of the tank can be anything between zero to P₀·V

Explanation:

The given parameters are;

The volume of the tank = V

The pressure in the tank = 0 Pascal

The pressure of the surrounding = P₀

The temperature of the surrounding = T₀

Exergy is a measure of the amount of a given energy which a system posses that is extractable to provide useful work. It is possible work that brings about equilibrium. It is the potential the system has to bring about change

The exergy balance equation  is given as follows;

X_2 - X_1 = \int\limits^2_1 {} \, \delta Q \left (1 - \dfrac{T_0}{T} \right ) - [W - P_0 \cdot (V_2 - V_1)]- X_{destroyed}

Where;

X₂ - X₁ is the difference between the two exergies

Therefore, the exergy of the system with regards to the environment is the work received from the environment which at is equal to done on the system by the surrounding which by equilibrium for an empty tank with 0 pressure is equal to the product of the pressure of the surrounding and the volume of the empty tank or P₀ × V less the work, exergy destroyed, while taking into consideration the change in heat of the system

Therefore, the exergy of the tank can be anything between zero to P₀·V.

6 0
3 years ago
A square silicon chip (k = 152 W/m·K) is of width 7 mm on a side and of thickness 3 mm. The chip is mounted in a substrate such
Harrizon [31]

Answer:

The steady-state temperature difference is 2.42 K

Explanation:

Rate of heat transfer = kA∆T/t

Rate of heat transfer = 6 W

k is the heat transfer coefficient = 152 W/m.K

A is the area of the square silicon = width^2 = (7/1000)^2 = 4.9×10^-5 m^2

t is the thickness of the silicon = 3 mm = 3/1000 = 0.003 m

6 = 152×4.9×10^-5×∆T/0.003

∆T = 6×0.003/152×4.9×10^-5 = 2.42 K

7 0
3 years ago
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