To find the electron and hole concentrations and fermi levels in silicon at 300 k for boron, fermi level is 9.3 x .
Ionization energy for boron in Si, 0.045 eV
Fermi level in silicon,
300 K at (Boron atoms)
All boron impurities are ionized, 300K
Electron, hole concentrations and Fermi levels is found out,
The value of Na =
np =
np =
np= 9.3 x
Fermi level is calculated,
Ef - Ev = kT ln(NV/ND)
value of kT = 0.0259 eV (300° K)
So, substitution the values
Ef - Ev = kT ln(NV/ND)
Ef - Ev = 0.0259ln (2.66 x )
Ef - Ev = 0.0259ln (26600)
Ef - Ev = 0.0259 x 10.18
Ef - Ev = 0.263 eV
What is ionization energy?
Ionization energy, also known as ionization energy (IE) or ionization energy (British English spelling), is the minimal amount of energy needed to free the most loosely bonded electron from an isolated gaseous atom, positive ion, or molecule in physics and chemistry.
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Answer:
Power output: W=1426.9MW
Explanation:
The power output of the falls is given mainly by its change in potential energy:
The potential energy for any point can be calculated as:
If we consider the base of the falls to be the reference height, at point 2 h=0, so P2=0, and height at point 1 equals 52m:
If we replace m with the mass rate M we obtain the rate of change in potential energy over time, so the power generated:
We have that for the Question "Write an expression for the <em>magnitude </em>of charge moved, Q, in terms of N and the fundamental charge e" it can be said its equation is
From the question we are told
Write an expression for the <em>magnitude </em>of charge moved, Q, in terms of N and the fundamental charge e
<h3>An Expression for the <em>magnitude </em>of charge moved</h3>Generally the equation for the <em>magnitude </em>of charge moved, Q is mathematically given as
Therefore
An expression for the <em>magnitude </em>of charge moved, Q, in terms of N and the fundamental charge e" it can be
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