Refectories are one of the types of ceramics that have low melting temperature. a)-True b)-False
1 answer:
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Answer:
a) P ≥ 22.164 Kips
b) Q = 5.4 Kips
Explanation:
GIven
W = 18 Kips
μ₁ = 0.30
μ₂ = 0.60
a) P = ?
We get F₁ and F₂ as follows:
F₁ = μ₁*W = 0.30*18 Kips = 5.4 Kips
F₂ = μ₂*Nef = 0.6*Nef
Then, we apply
∑Fy = 0 (+↑)
Nef*Cos 12º - F₂*Sin 12º = W
⇒ Nef*Cos 12º - (0.6*Nef)*Sin 12º = 18
⇒ Nef = 21.09 Kips
Wedge moves if
P ≥ F₁ + F₂*Cos 12º + Nef*Sin 12º
⇒ P ≥ 5.4 Kips + 0.6*21.09 Kips*Cos 12º + 21.09 Kips*Sin 12º
⇒ P ≥ 22.164 Kips
b) For the static equilibrium of base plate
Q = F₁ = 5.4 Kips
We can see the pic shown in order to understand the question.
Answer:
Explanation:
<u><em>General Considerations</em></u>
The design of the yard will affect the natural surface and subsurface drainage pattern of a watershed or individual hillslope. Yard drainage design has as its basic objective the reduction or elimination of energy generated by flowing water. The destructive power of flowing water increases exponentially as its velocity increases. Therefore, water must not be allowed to develop sufficient volume or velocity so as to cause excessive wear along ditches, below culverts, or along exposed running surfaces, cuts, or fills.
A yard drainage system must satisfy two main criteria if it is to be effective throughout its design life:
1. It must allow for a minimum of disturbance of the natural drainage pattern.
2.It must drain surface and subsurface water away from the roadway and dissipate it in a way that prevents excessive collection of water in unstable areas and subsequent downstream erosion
The diagram below ilustrate diffrent sturcture of yard to be consider before planing to utiliza rainwater
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
>
because
> Vt.
- By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.