1answer.
Ask question
Login Signup
Ask question
All categories
  • English
  • Mathematics
  • Social Studies
  • Business
  • History
  • Health
  • Geography
  • Biology
  • Physics
  • Chemistry
  • Computers and Technology
  • Arts
  • World Languages
  • Spanish
  • French
  • German
  • Advanced Placement (AP)
  • SAT
  • Medicine
  • Law
  • Engineering
marishachu [46]
3 years ago
6

An aluminum heat sink (k = 240 W/m-K) used to cool an array of electronic chips consists of a square channel of inner width w =

30 mm, through which liquid flow may be assumed to maintain a uniform surface temperature of T1 = 25 °C. The outer width and length of the channel are W = 50 mm and L = 200 mm, respectively.
If N = 100 chips attached to the outer surfaces of the heat sink maintain an approximately uniform surface temperature of T2 = 60 °C and all of the heat dissipated by the chips is assumed to be transferred to the coolant, what is the heat dissipation per chip? If the contact resistance between each chip and the heat sink is R12 = 0.2 K/W, what is the chip temperature?

Engineering
2 answers:
OverLord2011 [107]3 years ago
8 0

Answer:

Explanation: see attachment below

forsale [732]3 years ago
8 0

Answer:

The answers to the question are;

The heat dissipation per chip is 84 W

The chip temperature is 76.8 ° C

Explanation:

T1 = 25 °

T2 = 60°

ka = 240 W/(m×k)

The formula for heat transferred by conduction is given by

Q = (ka×A×(T1-T2))/La

Area A is given by

A = Length×Width = 50 mm × 200 mm = 10000 mm^2 = 0.01 m^2

La = (Outer width - Inner width)/2 = (50 mm - 30 mm)/2

= 10 mm = 0.01 mm

Therefore Q = (240×0.01×(60-25))/0.01 = 8400 W

Heat dissipated per chip = Q/N = 8400 W/100

= 84 W

Contact resistance is given by

Rcontact = (T3-T2)/(Q/A)

Where Q/A is the heat dissipated per each chip

Therefore

0.2 K/W = (T3-60)K/84

Or 84×0.2 = 16.8 = T3 - 60

T3 = 60 + 16.8 = 76.8 ° C

The chip temperature = 76.8 ° C

You might be interested in
(25%) A well-insulated compressor operating at steady state takes in air at 70 oF and 15 psi, with a volumetric flow rate of 500
lubasha [3.4K]

Answer:

You can look it up

Explanation: if you don't know what it is look it up on .

6 0
3 years ago
What is the thermal efficiency of this regeneration cycle in terms of enthalpies and fractions of total flow?
irga5000 [103]

Answer:

\eta =\dfrac{(h_3-h_4)-(h_2-h_1)}{(h_3-h_5)}

Explanation:

generally regeneration of cycle is used in the case of gas turbine. due to regeneration efficiency of turbine is increased but there is no effect on the on the net work out put of turbine.Actually in regeneration net heta input is decreases that is why total efficiency  increase.

 Now from T-S diagram

    W_{net}=W_{out}-W_{in}

   W_{net}=(h_3-h_4)-(h_2-h_1)

  Q_{in}=h_3-h_5

  Due to generation (h_5-h_2) amount of energy has been saved.

  Q_{generation}=Q_{saved}

So efficiency of cycle \eta =\frac{W_{net}}{Q_{in}}

  \eta =\dfrac{(h_3-h_4)-(h_2-h_1)}{(h_3-h_5)}

Effectiveness of re-generator

  \varepsilon =\dfrac{(h_5-h_2)}{(h_4-h_2)}

So the efficiency of regenerative cycle

\eta =\dfrac{(h_3-h_4)-(h_2-h_1)}{(h_3-h_5)}

7 0
3 years ago
The electron concentration in silicon at T = 300 K is given by
puteri [66]

Answer:

E=1.44*10^-7-2.6exp(\frac{-x}{18} )v/m

Explanation:

From the question we are told that:

Temperature of silicon T=300k

Electron concentration n(x)=10^{16}\exp (\frac{-x}{18})

                                        \frac{dn}{dx}=(10^{16} *(\frac{-1}{16})\exp\frac{-x}{16})

Electron diffusion coefficient is Dn = 25cm^2/s \approx 2.5*10^{-3}

Electron mobility is \mu n = 960 cm^2/V-s \approx0.096m/V

Electron current density Jn = -40 A/cm^2 \approx -40*10^{4}A/m^2

Generally the equation for the semiconductor is mathematically given by

Jn=qb_n\frac{dn}{dx}+nq \mu E

Therefore

-40*10^{4}=1.6*10^{-19} *(2.5*10^{-3})*(10^{16} *(\frac{-1}{16})\exp\frac{-x}{16})+(10^{16}\exp (\frac{-x}{18}))*1.6*10^{-19}*0.096* E

E=\frac{-2.5*10^-^7 exp(\frac{-x}{18})+40*10^{4}}{1.536*10^-4exp(\frac{-x}{18} )}

E=1.44*10^-7-2.6exp(\frac{-x}{18} )v/m

7 0
3 years ago
In DC electrode positive, how much power is at the work clamp?
Korolek [52]

Answer:

1/3 power

Explanation:

I'm just a smart guy

7 0
3 years ago
Most deformation occurs along plate boundaries because ________.
Svetlanka [38]
B) the plates are in constant motion and as a result the boundaries are where they interact
3 0
3 years ago
Other questions:
  • Set oWMP = CreateObject("WMPlayer.OCX.7?) Set colCDROMs = oWMP.CdromCollection do if colCDROMs.Count >= 1 then For i = 0 to c
    14·1 answer
  • A small truck is to be driven down a 4% grade at 70 mi/h. The coefficient of road adhesion is 0.95, and it is known that the bra
    7·1 answer
  • 5. Switch a in the circuit has been open for a long time and switch b has been closed for a long time. Switch a is closed at t =
    13·1 answer
  • A heat pump designer claims to have an air-source heat pump whose coefficient of performance is 1.8 when heating a building whos
    10·1 answer
  • List the main activities of exploration??
    5·1 answer
  • A __________ is an added note showing additional or more specific information.
    13·1 answer
  • Describe the relationship between atomic structure and Youngs' modulus?
    15·1 answer
  • Match the military operation to the category of satellite that would perform it.
    15·1 answer
  • أجوبة على مسائل في الإستاتيكا أيمكن ذالك
    9·1 answer
  • The driver should be able to see the ground within _____ to the front?
    14·1 answer
Add answer
Login
Not registered? Fast signup
Signup
Login Signup
Ask question!