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Doss [256]
3 years ago
5

To compute the energy used by a motor, multiply the power that it draws by the time of operation. Con- sider a motor that draws

12.5 hp for 16 h/day, five days per week. Compute the energy used by the mo- tor for one year. Express the result in ft.lb and W.h
Engineering
1 answer:
ehidna [41]3 years ago
3 0

Answer:

E=52000Hp.h

E=38724920Wh

E=1.028x10^11 ftlb

Explanation:

To solve this problem you must multiply the engine power by the time factor expressed in h / year, to find this value you must perform the conventional unit conversion procedure.

Finally, when you have the result Hp h / year you convert it to Ftlb and Wh

E=(12.5hp)(\frac{16h}{day} )(\frac{5 days}{week} )(\frac{52week}{year} )\\

E=52000Hp.h

E=52000Hp.h(\frac{744.71Wh}{Hp.h} )\\

E=38724920Wh

E=52000Hph(\frac{1977378.4  ft lb}{1Hph}

E=1.028x10^11 ftlb

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The mechanical properties of a metal may be improved by incorporating fine particles of its oxide. Given that the moduli of elas
Goshia [24]

Answer:

a) 347.2 GPa

b) 233.02 GPa

Explanation:

a) To find the upper bound modulus of elasticity, we use the formula:

E_c(u) = E_mV_m + E_pV_p

Where,

Volume fraction= V

E = modulus

Em=52GPa

Ep=380GPa

Vp=90%=0.90

Vm= 100%-90%=10%=0.10

We now have:

E_c(u) = (52*0.1)+(380*0.90)

= 5.2+342

= 347.2 GPa

b) For the lower bound modulus of elasticity, we use:

E_c(l) = \frac{E_mE_p}{E_pV_m+E_m+V_p}

=\frac{52*380}{(52*0.90)+(380*0.10)}

=233.02 GPa

7 0
3 years ago
2.18 The net potential energy between two adjacent ions, EN, may be represented by the following equation: (1) Calculate the bon
goblinko [34]

Answer:

2.18

Explanation:

because ya correc

3 0
3 years ago
(a) Consider a germanium semiconductor at T 300 K. Calculate the thermal equilibrium electron and hole concentrations for (i) Nd
padilas [110]

Answer:

a.

i. electron concentration, n₀ = 2 × 10¹⁵ cm⁻³, hole concentration, p₀ = 2 × 10¹¹ cm⁻³

ii. electron concentration, n₀ = 1.33 × 10¹¹ cm⁻³, hole concentration, p₀ = 3 × 10¹⁵ cm⁻³

b.  

i. electron concentration, n₀ = 2 × 10¹⁵ cm⁻³, hole concentration, p₀ = 2.205 × 10⁻³ cm⁻³

ii. electron concentration, n₀ = 1.47 × 10⁻³ cm⁻³, hole concentration, p₀ = 3 × 10¹⁵ cm⁻³

c. It means that the minority carrier contribute little to the conductivity of the semi-conductor.

Explanation:

a. For Germanium, intrinsic concentration n₁ = 2 × 10¹³ cm⁻³.

i. For the electron concentration, n₀ wit N₁ = donor concentration = 2 × 10¹⁵ cm⁻³ and N₂ = acceptor concentration = 0,

n₀ = 1/2[(N₁ - N₂) +√[(N₁ - N₂)² + 4n₁²] ]      since N₁ > N₂

n₀ = 1/2[(2 × 10¹⁵ cm⁻³ - 0) +√[(2 × 10¹⁵ cm⁻³ - 0)² + 4(2 × 10¹³ cm⁻³)²] ]

n₀ = 1/2[(2 × 10¹⁵ cm⁻³ +√[(4 × 10³⁰ cm⁻⁶ + 16 × 10²⁶ cm⁻⁶] ]

n₀ = 1/2[(2 × 10¹⁵ cm⁻³ +√[(4.0016 × 10³⁰ cm⁻⁶] ]

n₀ = 1/2[(2 × 10¹⁵ cm⁻³ + 2.0004 × 10¹⁵ cm⁻³ ]

n₀ = 1/2[4.0004 × 10¹⁵ cm⁻³ ]

n₀ = 2.0002 × 10¹⁵ cm⁻³ ≅ 2 × 10¹⁵ cm⁻³

The hole concentration p₀ is gotten from

n₀p₀ = n₁²

p₀ = n₁²/n₀ = (2 × 10¹³ cm⁻³)²/2 × 10¹⁵ cm⁻³ = 4 × 10²⁶ cm⁻⁶/2 × 10¹⁵ cm⁻³

p₀ = 2 × 10¹¹ cm⁻³

ii.  For the hole concentration, p₀ wit N₁ = donor concentration = 7 × 10¹⁵ cm⁻³ and N₂ =  acceptor concentration = 10¹⁶ cm⁻³,

p₀ = 1/2[(N₂ - N₁) +√[(N₂ - N₁)² + 4n₁²] ]      since N₂ > N₁

p₀ = 1/2[(10¹⁶ cm⁻³ - 7 × 10¹⁵ cm⁻³) +√[(10¹⁶ cm⁻³ - 7 × 10¹⁵ cm⁻³)² + 4(2 × 10¹³ cm⁻³)²] ]

p₀ = 1/2[(3 × 10¹⁵ cm⁻³ +√[(9 × 10³⁰ cm⁻⁶ + 16 × 10²⁶ cm⁻⁶] ]

p₀ = 1/2[(3 × 10¹⁵ cm⁻³ +√[(9.0016 × 10³⁰ cm⁻⁶] ]

p₀ = 1/2[(3 × 10¹⁵ cm⁻³ + 3.0003 × 10¹⁵ cm⁻³ ]

p₀ = 1/2[6.0003 × 10¹⁵ cm⁻³ ]

p₀ = 3.00015 × 10¹⁵ cm⁻³ ≅ 3 × 10¹⁵ cm⁻³

Te electron concentration n₀ is gotten from

n₀p₀ = n₁²

n₀ = n₁²/p₀ = (2 × 10¹³ cm⁻³)²/3 × 10¹⁵ cm⁻³ = 4 × 10²⁶ cm⁻⁶/3 × 10¹⁵ cm⁻³

n₀ = 1.33 × 10¹¹ cm⁻³

b. For GaAs, intrinsic concentration n₁ = 2 × 10⁶ cm⁻³.

i. For the electron concentration, n₀ wit N₁ = donor concentration = 2 × 10¹⁵ cm⁻³ and N₂ =  acceptor concentration = 0,

n₀ = 1/2[(N₁ - N₂) +√[(N₁ - N₂)² + 4n₁²] ]      since N₁ > N₂   and N₁ - N₂ = 2 × 10¹⁵ cm⁻³ >> n₁ = 2 × 10⁶ cm⁻³

n₀ = (N₁ - N₂) = 2 × 10¹⁵ cm⁻³ - 0 = 2 × 10¹⁵ cm⁻³

The hole concentration p₀ is gotten from

n₀p₀ = n₁²

p₀ = n₁²/n₀ = (2.1 × 10⁶ cm⁻³)²/2 × 10¹⁵ cm⁻³ = 4.41 × 10¹² cm⁻⁶/2 × 10¹⁵ cm⁻³

p₀ = 2.205 × 10⁻³ cm⁻³

ii. For the hole concentration, p₀ wit N₁ = donor concentration = 7 × 10¹⁵ cm⁻³ and N₂ =  acceptor concentration = 10¹⁶ cm⁻³,

p₀ = 1/2[(N₂ - N₁) +√[(N₂ - N₁)² + 4n₁²] ]      since N₂ > N₁ and N₂ - N₁ = 10¹⁶ cm⁻³ - 7 × 10¹⁵ cm⁻³ = 3 × 10¹⁵ cm⁻³ >> n₁ = 2.1 × 10⁶ cm⁻³

p₀ ≅ N₂ - N₁ = 3 × 10¹⁵ cm⁻³

The electron concentration n₀ is gotten from

n₀p₀ = n₁²

n₀ = n₁²/p₀ = (2.1 × 10⁶ cm⁻³)²/3 × 10¹⁵ cm⁻³ = 4.41 × 10¹² cm⁻⁶/3 × 10¹⁵ cm⁻³

n₀ = 1.47 × 10⁻³ cm⁻³

c. It means that the minority carrier contribute little to the conductivity of the semi-conductor.

4 0
3 years ago
Using Von Karman momentum integral equation, find the boundary layer thickness, the displacement thickness, the momentum thickne
Alex_Xolod [135]

Answer:

Explanation:

We can solve Von Karman momentum integral equation as seen below using following in the attached file

3 0
3 years ago
Ventajas motor avion
Sauron [17]

Answer:

Explanation:

Usar motores eléctricos en aviones ofrece numerosas ventajas reales. A diferencia de los motores de combustión interna los motores eléctricos no necesitan aire para funcionar, lo que significa que pueden mantener toda su capacidad y potencia incluso a altitudes elevadas donde el aire es más tenue.

4 0
3 years ago
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