i just had this question and i totally guessed. it was 2.2.
A diver having mass m climbs up the diving board.
We know that Gravitational potential energy is given as <span>P<span>EG</span>=mgΔh</span>
What changes is his Gravitational potential energy due to change of height <span>Δh</span> with reference to the ground/water level.
While standing on the diving board his velocity is zero. As such kinetic energy is also zero.
Once he jumps off the springboard we see he gets additional energy from the springboard and falls down under action of gravity g. Due to decrease of height above the ground level Gravitational potential energy decreases and gets converted in to his kinetic energy. <span>1/2m<span>v2</span></span>.
While in air he encounters air resistance. Some of his energy is spent in overcoming this resistance. Gets converted in to kinetic and thermal energy of surrounding air and his body.
Once diver reaches the water, we see water splashing and hear noise of splash. Thereafter the diver comes to rest. Now his potential energy becomes zero. And converted kinetic energy has been converted in to kinetic energy, heat energy and sound energy of water.
As such energy transformation equation looks like
<span><span>Gravitational PE+Elastic PE of springboard</span><span>→Kinetic energy of air and water+Sound energy of splash+thermal energy</span></span>
Velocity
if you change direction, say turn around, so does your velocity
an increase in velocity is called accelleration
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
Some of the earliest work on semiconductor amplifiers emerged from Eastern Europe. In 1922-23 Russian engineer Oleg Losev of the Nizhegorod Radio Laboratory, Leningrad, found that a special mode of operation in a point-contact zincite (ZnO) crystal diode supported signal amplification up to 5 MHz. Although Losev experimented with the material in radio circuits for years, he died in the 1942 Siege of Leningrad and was unable to advocate for his place in history. His work is largely unknown.
Austro-Hungarian physicist, Julius E. Lilienfeld, moved to the US and in 1926 filed a patent for a “Method and Apparatus for Controlling Electric Currents” in which he described a three-electrode amplifying device using copper-sulfide semiconductor material. Lilienfeld is credited with inventing the electrolytic capacitor but there is no evidence that he built a working amplifier. His patent, however, had sufficient resemblance to the later field effect transistor to deny future patent applications for that structure.
<span>German scientists also contributed to this early research. While working at Cambridge University, England in 1934, German electrical engineer and inventor Oskar Heil filed a patent on controlling current flow in a semiconductor via capacitive coupling at an electrode – essentially a field-effect transistor. And in 1938, Robert Pohl and Rudolf Hilsch experimented on potassium-bromide crystals with three electrodes at Gottingen University. They reported amplification of low-frequency (about 1 Hz) signals. None of this research led to any applications but Heil is remembered in audiophile circles today for his air motion transformer used in high fidelity speakers.</span>
- Mass=m=142kg
- Acceleration=a=30m/s
- Force=F
Using Newton's second law
