1. Using Strong Permanent. 2. increasing the current. 3. Decreasing the space between Magnets
Explanation:
Brainiest
Answer:
∆T = Mv^2Y/2Cp
Explanation:
Formula for Kinetic energy of the vessel = 1/2mv^2
Increase in internal energy Δu = nCVΔT
where n is the number of moles of the gas in vessel.
When the vessel is to stop suddenly, its kinetic energy will be used to increase the temperature of the gas
We say
1/2mv^2 = ∆u
1/2mv^2 = nCv∆T
Since n = m/M
1/2mv^2 = mCv∆T/M
Making ∆T subject of the formula we have
∆T = Mv^2/2Cv
Multiple the RHS by Cp/Cp
∆T = Mv^2/2Cv *Cp/Cp
Since Y = Cp/CV
∆T = Mv^2Y/2Cp k
Since CV = R/Y - 1
We could also have
∆T = Mv^2(Y - 1)/2R k
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Answer:
d = 6.43 cm
Explanation:
Given:
- Speed resistance coefficient in silicon n = 3.50
- Memory takes processing time t_p = 0.50 ns
- Information is to be obtained within T = 2.0 ns
Find:
- What is the maximum distance the memory unit can be from the central processing unit?
Solution:
- The amount of time taken for information pulse to travel to memory unit:
t_m = T - t_p
t_m = 2.0 - 0.5 = 1.5 ns
- We will use a basic relationship for distance traveled with respect to speed of light and time:
d = V*t_m
- Where speed of light in silicon medium is given by:
V = c / n
- Hence, d = c*t_m / n
-Evaluate: d = 3*10^8*1.5*10^-9 / 3.50
d = 0.129 m 12.9 cm
- The above is the distance for pulse going to and fro the memory and central unit. So the distance between the two is actually d / 2 = 6.43 cm
