Answer:
This process is known as doping. It can be done by adding either of two types of impurity to the crystal. (A) By adding electron rich impurities i.e., group 15 elements to the silicon and germanium of group 14 elements.
sodium chloride
and lead (II) acetate
potassium sulfate and strontium iodide
chromium (III) nitrate and sodium phosphate
1.
2NaCl + Pb(CH3COO)2 → 2NaCH3COO + PbCl2
2.
K2SO4 + SrI2 → KI + SrSO4
3.
Cr(NO3)3 + Na3PO4 →CrPO4 + NaNO3
Answer:
ΔG° = -533.64 kJ
Explanation:
Let's consider the following reaction.
Hg₂Cl₂(s) ⇄ Hg₂²⁺(aq) + 2 Cl⁻(aq)
The standard Gibbs free energy (ΔG°) can be calculated using the following expression:
ΔG° = ∑np × ΔG°f(products) - ∑nr × ΔG°f(reactants)
where,
ni are the moles of reactants and products
ΔG°f(i) are the standard Gibbs free energies of formation of reactants and products
ΔG° = 1 mol × ΔG°f(Hg₂²⁺) + 2 mol × ΔG°f(Cl⁻) - 1 mol × ΔG°f(Hg₂Cl₂)
ΔG° = 1 mol × 148.85 kJ/mol + 2 mol × (-182.43 kJ/mol) - 1 mol × (-317.63 kJ/mol)
ΔG° = -533.64 kJ
