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3 years ago

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The capacitance of a Pt-n-type GaAs Schottky diode is given by 1 (C(μF))2 = 1.0 × 105 − 2.0 × 105 V The diode area is 0.1 cm2. C

alculate the built-in voltage Vbi, the barrier height, and the doping concentration

1 answer:

Cerrena [4.2K]3 years ago

5 0

Answer:

built in potential Vbi = +0.5V

barrier height = 0.139 V

doping concentration = 5.39 × 10²³cm³

Explanation:

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1 year ago

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Here is the full question

Suppose there are 10,000 civilizations in the Milky Way Galaxy. If the civilizations were randomly distributed throughout the disk of the galaxy, about how far (on average) would it be to the nearest civilization?

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$r^2_e= \frac{d}{\pi}$

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$r_e = \sqrt{\frac{\frac{\pi (\frac{D}{2})^2 }{10, 000}}{\pi} }$

$r_e = \sqrt{\frac{(\frac{D}{2})^2 }{10, 000}}$

$r_e = \sqrt{\frac{(\frac{100,000}{2})^2 }{10, 000}}$

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