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3 years ago

9

The capacitance of a Pt-n-type GaAs Schottky diode is given by 1 (C(μF))2 = 1.0 × 105 − 2.0 × 105 V The diode area is 0.1 cm2. C

alculate the built-in voltage Vbi, the barrier height, and the doping concentration

1 answer:

Cerrena [4.2K]3 years ago

5 0

Answer:

built in potential Vbi = +0.5V

barrier height = 0.139 V

doping concentration = 5.39 × 10²³cm³

Explanation:

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