The capacitance of a Pt-n-type GaAs Schottky diode is given by 1 (C(μF))2 = 1.0 × 105 − 2.0 × 105 V The diode area is 0.1 cm2. C
alculate the built-in voltage Vbi, the barrier height, and the doping concentration
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Answer:
Explanation:
Let assume begins movement at zero point, that is, height is equal to zero. The block has an initial linear kinetic energy and no gravitational potential energy and end with no linear kinetic energy, some gravitational potential energy and work losses due to slide friction. In mathematical terms, this system can be model as follows:
Where are linear kinetic energy, gravitational potential energy and work, respectively.