Consider a CMOS inverter which has ideal transistors with the following characteristics: PMOS transistor: W/L = 2; Mobility (up)
1 answer:
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Answer:
Following the ways of dealing with incomplete questions, i was able to get the complete question, please look at the attachment for ans.
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
>
because
> Vt.
- By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.
Answer:
Please see attachment for the computation.
