Answer:
Explanation:
ADT for an 2-D array:
struct array{
int arr[10];
}arrmain[10];
An application that stores an array with 1000 rows and 1000 columns, where less than 10,000 of the array values are non-zero. The two different implementations for such arrays that would be more space efficient than a standard two-dimensional array implementation requiring one million positions are :
1) struct array{
int *p;
}arr[1000];
2) struct array{
int *p;
}arr[1000];
Answer:
1
Explanation:
because every time you dived a number by its own number it is 1
The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region.
<u>Explanation:</u>
- Since
>
because
> Vt. - By the saturation region the MOSFET is operating.
- A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.
- MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics.
- The core of this is integrated circuit.
- It is fabricated and designed in an individual chips due to tiny sizes.
Answer:
option c is correct
47.2%
Explanation:
given data
consisting of refrigerant = 134 a
volume V = 0.01 m³/kg
pressure P = 1MPa = 1000 kPa
to find out
quality of the R 134a
solution
we will get here value of volume Vf and Vv from pressure table 60 kpa to 3 Mpa for 1 Mpa of R134 a
that is
Vf = 0.0008701 m³/kg
Vv = 0.0203 m³/kg
so we will apply here formula that is
quality = (V - Vf) / (Vv - Vf) ............1
put here value
quality = (0.01 - 0.0008701 ) / ( 0.0203 - 0.0008701 )
quality = 0.4698
so quality is 47 %
SO OPTION C IS CORRECT