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andreev551 [17]
3 years ago
12

Compute the total circulation around a symmetrical airfoil whose circulation distribution is given by eqn. 4.24. Then compute th

e sectional lift of the airfoil using the Kutta- Joukowski theorem.

Engineering
2 answers:
liberstina [14]3 years ago
6 0

Answer:

Please see attachment for the computation.

Nikitich [7]3 years ago
6 0

Answer:

The answer is γ(θ) = 2αVα((1+cosθ)/sinθ)

Explanation:

Please look at the image for the explanation of the answer

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The total compressor work is 234.8 kJ/kg for a isentropic compression

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4 years ago
Ronny owns a paper manufacturing company. He intends to turn the manufacturing waste into good use. What should he do?
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4 0
3 years ago
What is meant by thermodynamic property? How do you classify the property? Explain with specific examples.
Sergeu [11.5K]

Answer:

The condition of very system can be identified by some physical characteristics of the system known as Thermodynamic Property of the system. For example, pressure, temperature, volume, etc.

Explanation:

Thermodynamic properties are nothing but the physical characteristics of any body by which the physical condition of the body can be described. properties describes the different states of a system. They are macroscopic.

               Properties are of two types ---

Intensive property

Extensive property

Intensive Property : Those properties of a system which does not depend upon mass of the system are known Intensive property.

                               For example, pressure, temperature, density,specific volume, etc

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4 0
3 years ago
Find values of the intrinsic carrier concentration n for silicon at –70° 0° 20° C, 100° C, and C. At 125° each temperature, what
Dominik [7]

Answer:

Part (i) at –70° C, intrinsic carrier concentration of silicon is 2.865 x 10⁵ carriers/cm³ and fraction of the atoms ionized is 5.37 x 10⁻¹⁸

Part (ii) at 0° C, intrinsic carrier concentration of silicon is 1.533 x 10⁹ carriers/cm³ and fraction of the atoms ionized is 3.067 x 10⁻¹⁴

Part (iii) at 20° C, intrinsic carrier concentration of silicon is 8.652 x 10⁹ carriers/cm³ and fraction of the atoms ionized is 1.731 x 10⁻¹³

Part (iv) at 100° C, intrinsic carrier concentration of silicon is 1.444 x 10¹² carriers/cm³ and fraction of the atoms ionized is 2.889 x 10⁻¹¹

Part (iv) at 125° C, intrinsic carrier concentration of silicon is 4.754 x 10¹² carriers/cm³ and fraction of the atoms ionized is 9.508 x 10⁻¹¹

Explanation:

ni^2 = BT^3(e^{\frac{-E_g}{KT}})\\\\ni = \sqrt{ BT^3(e^{\frac{-E_g}{KT}})}

where;

B = 5.4 x 10⁻³¹

Eg = 1.12 ev

K = 8.62 x 10⁻⁵ eV/K

T = (273 + ⁰C) K

Number of atoms in silicon crystal = 5 x 10²² atoms/cm³

Part (i) For –70° C, T = (273 -70 ⁰C)K = 203 K

ni = \sqrt{ 5.4*10^{31}*203^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*203}})}} \ =2.685*10^5 \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{2.685*10^5}{5 *10^{22}} = 5.370 *10^{-18}

Part (ii) For 0° C, T = (273 +0 ⁰C)K = 273 K

ni = \sqrt{ 5.4*10^{31}*273^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*273}})}} \ =1.533*10^9 \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{1.533*10^9}{5 *10^{22}} = 3.067 *10^{-14}

Part (iii) For 20° C, T = (273 + 20 ⁰C)K = 293 K

ni = \sqrt{ 5.4*10^{31}*293^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*293}})}} \ =8.652*10^9 \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{8.652*10^9}{5 *10^{22}} = 1.731 *10^{-13}

Part (iv) For 100° C, T = (273 + 100 ⁰C)K = 373 K

ni = \sqrt{ 5.4*10^{31}*373^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*373}})}} \ =1.444*10^{12} \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{1.444*10^{12}}{5 *10^{22}} = 2.889 *10^{-11}

Part (v) For 125° C, T = (273 + 125 ⁰C)K = 398 K

ni = \sqrt{ 5.4*10^{31}*398^3(e^ \ {\frac{-1.12}{8.62*10^{-5}*398}})}} \ =4.754*10^{12} \ carriers/cm^3

Fraction \  of \ atoms \ ionized = \frac{4.754*10^{12}}{5 *10^{22}} = 9.508 *10^{-11}

7 0
3 years ago
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