Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
You know I’m going to be honest I don’t feel like it
Answer:
F=m x a
(F is force ,M is mass and A is acceleration)
in thisncase the Mass is given but we need to find ou the acceleration
Formula for acceleration-
a=(v - u)/t
(v is final velocity , u is initiatal velocity and t is time)
a = (0 - 80)/4
a= -80/4
a= -20
By substituting the values-
F= m x a
F= 1500 x -20
F=-30000N
Thus the force acted is -30000N
hope this helps
