when the concentration of hydrogen ions in a solution is decreased by a factor of ten, the pH of the solution

Which type of orbital will be occupied by the electrons of highest energy for the Si^4+ ground-state ion? 1. 2s 2. 3p 3. 4s 4. 4

Shtirlitz [24]

Answer: Option (5) is the correct answer.

Explanation:

It is known that the ground state electronic configuration of silicon is $[Ne]3s^{2}3p^{2}$ .

And, we know that when an atom tends to gain an electron then it acquires a negative charge and when an atom tends to lose an electron then it acquires a positive charge.

As $Si^{4+}$ has a +4 charge which means that it has lost 4 electrons. Hence, the electronic configuration of $Si^{4+}$ is $1s^{2}2s^{2}2p^{6}$ .

According to the Aufbau principle, in the ground state of an atom or ion the electrons fill atomic orbitals of the lowest energy levels first, before filling the higher energy levels.

As 2p orbital is filled after the filling of 2s orbital.

Therefore, we can conclude that 2p orbital will be occupied by the electrons of highest energy for the $Si^{4+}$ ground-state ion.

4 0

3 years ago

Give the number of lone pairs around the central atom and the molecular geometry of XeF4.A)0 lone pairs, tetrahedralB)1 lone pai

vovangra [49]

Answer: 2 lone pairs, square planar

Explanation:

Using the VSEPR ( Valence Shell Electron Pair Repulsion)Theory

To calculate the number of lone pairs electron can be done using the formula;

Number of electrons = ½ (V+N-C+A)

V mean valency of the central atom

N means number of monovalent bonding atoms

C means charge on cation

A means charges on anion

Therefore, to calculate the number of lone pair electron C=A=0;

Number of electrons = ½ (8+4) = 12/2 = 6

Number of bonding pair = 4

Number of lone pairs of electron = 6-4 = 2

The hybridrization of the compound is sp3d2 because the number of electrons around the central atom is 6.

The geometry of the compound is square planar and this is because of the repulsion between the bonding pair of electrons and lone pair of electrons which causes the lone pair of electrons to lie in a perpendicular plane in order to acquire stability.