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3 years ago

All MOS devices are subject to damage from:________

Engineering

1 answer:

Alchen [17]3 years ago

6 0

Answer:

d. all of these

Explanation:

Electrostatic discharge will generally produce excess voltage in a local area that results in excessive current and excessive heat. It will blast a crater in an MOS device, or melt bond wires, or cause damage of other sorts. In short, MOS devices are subject to damage from "all of these."

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3 years ago

A thin plastic membrane is used to separate helium from a gas stream. Under steady-state conditions the concentration of helium

Juli2301 [7.4K]

Answer:

N_A=1.5*10^-8 kmol/s.m^2

Explanation:

KNOWN:

Molar concentration of helium at the inner and outer surfaces of a plastic membrane. Diffusion coefficient and membrane thickness.

FIND:

Molar diffusion flux.

ASSUMPTIONS:

(1) Steady-state conditions, (2) One-dimensional diffusion in a plane wall, (3) Stationary medium, (4) Uniform C = C_A + C_B.

ANALYSIS: The molar flux may be obtained from

N_A=D_AB/L(C_A,1-C_A,2)

=10^-9 m^2/s/0.001 m(0.02-0.005)kmol/m^3

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COMMENTS: The mass flux is:

n_A,x=M_a*N_A,x

n_A,x=6*10^-8 kg/s m^2

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3 years ago