Answer: I = 111.69 pA
Explanation: The hall effect is all about the fact that when a semiconductor is placed perpendicularly to a magnetic field, a voltage is generated which could be measured at right angle to the current path. This voltage is known as the hall voltage.
The hall voltage of a semiconductor sensor is given below as
V = I×B/qnd
Where V = hall voltage = 1.5mV =1.5/1000=0.0015V
I = current =?,
n= concentration of charge (electron density) = 5.8×10^20cm^-3 = 5.8×10^20/(100)³ = 5.8×10^14 m^-3
q = magnitude of an electronic charge=1.609×10^-19c
B = strength of magnetic field = 5T
d = thickness of sensor = 0.8mm = 0.0008m
By slotting in the parameters, we have that
0.0015 = I × 5/5.8×10^14 × 1.609×10^-19×0.0008
0.0015 = I×5/7.446×10^-8
I = (0.0015 × 7.446×10^-8)/5
I = 111.69*10^(-12)
I = 111.69 pA
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I think the answer A since temperature is the average kinetic energy of the molecules, so increasing temperature must increase kinetic energy
It would be oraganic matter I think.
Answer:
c. 2 MeV.
Explanation:
The computation of the binding energy is shown below
![= [Zm_p + (A - Z)m_n - N]c^2\\\\=[(1) (1.007825u) + (2 - 1 ) ( 1.008665 u) - 2.014102 u]c^2\\\\= (0.002388u)c^2\\\\= (.002388) (931.5 MeV)\\\\=2.22 MeV](https://tex.z-dn.net/?f=%3D%20%5BZm_p%20%2B%20%28A%20-%20Z%29m_n%20-%20N%5Dc%5E2%5C%5C%5C%5C%3D%5B%281%29%20%281.007825u%29%20%2B%20%282%20-%201%20%29%20%28%201.008665%20u%29%20-%202.014102%20u%5Dc%5E2%5C%5C%5C%5C%3D%20%280.002388u%29c%5E2%5C%5C%5C%5C%3D%20%28.002388%29%20%28931.5%20MeV%29%5C%5C%5C%5C%3D2.22%20MeV)
= 2 MeV
As 1 MeV = (1 u) c^2
hence, the binding energy is 2 MeV
Therefore the correct option is c.
We simply applied the above formula so that the correct binding energy could come
And, the same is to be considered
